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Title: | Photoelectrochemical Characterisation of ZnSe coated Copper Indium Sulphide Thin Film Electrodes |
Authors: | Wijesundera, R.P. Siripala, W. Jayasuriya, K.D. Kalingamudali, S.R.D. de Silva, K.T.L. Jayanetti, J.K.D.S. |
Keywords: | Photoelectrochemical Cell Characterisation ZnSe Copper Indium Sulphide Thin Film Electrodes; Kalinga |
Issue Date: | 1999 |
Citation: | RP Wijesundara, W Siripala, KD Jayasuriya, SRD Kalingamudali, KTL De Silva, and JKDS Jayanetti, 1999, Photoelectrochemical Characterisation of ZnSe coated Copper Indium Sulphide Thin Film Electrodes, Proc. 55thAnnual Sess., SLAAS, p. 203 |
Abstract: | Capper Indium Sulphide thin films were prepared by sulphidation of Cu-In alloy on Ti substrate. Cu-In alloy was potentiostatically electrodeposited at ~1.4 V Vs SCE in an aqueous bath containing 5 mM CuCl2) 37.5m1 InCl3,1% (V/V) TEM and .75% (V/V) ammonia. Sulphidation was carried out in saturated H2S gas at 550�C for 30 min. XRD measurement reveals that the crystal structure of the films is CuInl1S17. ZnSe was deposited on CuInS electrode by electrodeposition in an aqueous bath of 0.1 M ZnS04 and 10 -5 M Se02 at -0.5 V Vs SCE for 90 min. XRD measurement reveals that the ZnSe films are amorphous. Ti/CulnS/ ZnSe thin film system in a PEC cell containing KI produces n-type photocondutivity. Dark and illuminated I-V measurement shows the existence of a main junction. However, some departure is also evident suggesting the possibility of existence of another junction. Spectral response of the Ti/CuInS/ZnSe system in a PEC cell shows the photoresponse of born n-CuInS/p-ZnSe and p-ZnSe/electrolyte interfaces. Normally, for shorter wavelength the spectral response is p-type while for the long wavelength it is n-type. The preliminary results of the study suggest the possibility of utilising electrodeposited n-CuInS in combination with electrodeposited p-ZnSe in developing a low-cost thin film solar cell. |
URI: | http://repository.kln.ac.lk/handle/123456789/4065 |
Appears in Collections: | Physics |
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