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DC Field | Value | Language |
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dc.contributor.author | Wijesundera, R.P. | en_US |
dc.contributor.author | Siripala, W. | en_US |
dc.contributor.author | Jayasuriya, K.D. | en_US |
dc.contributor.author | Kalingamudali, S.R.D. | en_US |
dc.contributor.author | de Silva, K.T.L. | en_US |
dc.contributor.author | Jayanetti, J.K.D.S. | en_US |
dc.date.accessioned | 2014-11-19T04:45:34Z | |
dc.date.available | 2014-11-19T04:45:34Z | |
dc.date.issued | 1999 | |
dc.identifier.citation | RP Wijesundara, W Siripala, KD Jayasuriya, SRD Kalingamudali, KTL De Silva, and JKDS Jayanetti, 1999, Photoelectrochemical Characterisation of ZnSe coated Copper Indium Sulphide Thin Film Electrodes, Proc. 55thAnnual Sess., SLAAS, p. 203 | |
dc.identifier.uri | http://repository.kln.ac.lk/handle/123456789/4065 | |
dc.description.abstract | Capper Indium Sulphide thin films were prepared by sulphidation of Cu-In alloy on Ti substrate. Cu-In alloy was potentiostatically electrodeposited at ~1.4 V Vs SCE in an aqueous bath containing 5 mM CuCl2) 37.5m1 InCl3,1% (V/V) TEM and .75% (V/V) ammonia. Sulphidation was carried out in saturated H2S gas at 550�C for 30 min. XRD measurement reveals that the crystal structure of the films is CuInl1S17. ZnSe was deposited on CuInS electrode by electrodeposition in an aqueous bath of 0.1 M ZnS04 and 10 -5 M Se02 at -0.5 V Vs SCE for 90 min. XRD measurement reveals that the ZnSe films are amorphous. Ti/CulnS/ ZnSe thin film system in a PEC cell containing KI produces n-type photocondutivity. Dark and illuminated I-V measurement shows the existence of a main junction. However, some departure is also evident suggesting the possibility of existence of another junction. Spectral response of the Ti/CuInS/ZnSe system in a PEC cell shows the photoresponse of born n-CuInS/p-ZnSe and p-ZnSe/electrolyte interfaces. Normally, for shorter wavelength the spectral response is p-type while for the long wavelength it is n-type. The preliminary results of the study suggest the possibility of utilising electrodeposited n-CuInS in combination with electrodeposited p-ZnSe in developing a low-cost thin film solar cell. | en_US |
dc.subject | Photoelectrochemical Cell | en_US |
dc.subject | Characterisation | en_US |
dc.subject | ZnSe | en_US |
dc.subject | Copper Indium Sulphide | en_US |
dc.subject | Thin Film Electrodes; Kalinga | en_US |
dc.title | Photoelectrochemical Characterisation of ZnSe coated Copper Indium Sulphide Thin Film Electrodes | |
dc.type | conference_item | en_US |
dc.identifier.department | Physics | en_US |
Appears in Collections: | Physics |
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File | Description | Size | Format | |
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Annex 52.pdf | 293.05 kB | Adobe PDF | View/Open |
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