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http://repository.kln.ac.lk/handle/123456789/10107
Title: | Is it possible to grow stable p-type CdS layers suitable for fabrication of electronic devices? |
Authors: | Kiriarachchi, H.D. Lamahewage, L.H.S.N.S. Wickramasinghe, W.A.S. de Silva, D.S.M. Pathiratne, K.A.S. Dharmadasa, I.M. |
Keywords: | Electrodeposition p-CdS n-CdS |
Issue Date: | 2013 |
Publisher: | University of Malaya, Malaysia |
Citation: | Kiriarachchi, H.D., Lamahewage, L.H.S.N.S., Wickramasinghe, W.A.S., De Silva, D.S.M., Pathiratne, K.A.S. and Dharmadasa, I.M. 2013. Is it possible to grow stable p-type CdS layers suitable for fabrication of electronic devices?. Solar Asia, P: 85-89, 22-24th August 2013, University of Malaya, Malaysia. |
Abstract: | CdS is a technologically important wide bandgap window material with some unique properties showing highest conversion efficiencies in thin film solar cells based on CdTe and CuInGaSe2 absorber materials. n-CdS/CdTe and n-CdS/CuInGaSe2 hetero-interfaces based solar cells have demonstrated 18.7% and 20.3% lab-scale solar cell efficiencies to date. Both these devices are fabricated based on n-type CdS window material. Recent work on graded bandgap devices using p-type AlGaAs window materials experimentally demonstrated highest Voc values of 1175 mV together with highest possible FF values ~0.85, and therefore if p-CdS can be grown, it provides another route to improve solar cell efficiencies and open doors for many other electronic devices. There are several attempts to grow Cu-doped p-CdS in the literature but the follow-up research work or devices based on p-CdS are scarce. In this research programme of solar energy materials development, using electrochemical growth method, p-type CdS was observed for certain layers. However, the stability of p-type CdS is found to be weak and these results are presented and discussed in this paper. |
URI: | http://repository.kln.ac.lk/handle/123456789/10107 |
Appears in Collections: | Chemistry |
Files in This Item:
File | Description | Size | Format | |
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SDS_Abs.Ext_21 abstract.pdf | 148.38 kB | Adobe PDF | View/Open |
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