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DC Field | Value | Language |
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dc.contributor.author | Kiriarachchi, H.D. | - |
dc.contributor.author | Lamahewage, L.H.S.N.S. | - |
dc.contributor.author | Wickramasinghe, W.A.S. | - |
dc.contributor.author | de Silva, D.S.M. | - |
dc.contributor.author | Pathiratne, K.A.S. | - |
dc.contributor.author | Dharmadasa, I.M. | - |
dc.date.accessioned | 2015-10-19T06:31:22Z | - |
dc.date.available | 2015-10-19T06:31:22Z | - |
dc.date.issued | 2013 | - |
dc.identifier.citation | Kiriarachchi, H.D., Lamahewage, L.H.S.N.S., Wickramasinghe, W.A.S., De Silva, D.S.M., Pathiratne, K.A.S. and Dharmadasa, I.M. 2013. Is it possible to grow stable p-type CdS layers suitable for fabrication of electronic devices?. Solar Asia, P: 85-89, 22-24th August 2013, University of Malaya, Malaysia. | en_US |
dc.identifier.uri | http://repository.kln.ac.lk/handle/123456789/10107 | - |
dc.description.abstract | CdS is a technologically important wide bandgap window material with some unique properties showing highest conversion efficiencies in thin film solar cells based on CdTe and CuInGaSe2 absorber materials. n-CdS/CdTe and n-CdS/CuInGaSe2 hetero-interfaces based solar cells have demonstrated 18.7% and 20.3% lab-scale solar cell efficiencies to date. Both these devices are fabricated based on n-type CdS window material. Recent work on graded bandgap devices using p-type AlGaAs window materials experimentally demonstrated highest Voc values of 1175 mV together with highest possible FF values ~0.85, and therefore if p-CdS can be grown, it provides another route to improve solar cell efficiencies and open doors for many other electronic devices. There are several attempts to grow Cu-doped p-CdS in the literature but the follow-up research work or devices based on p-CdS are scarce. In this research programme of solar energy materials development, using electrochemical growth method, p-type CdS was observed for certain layers. However, the stability of p-type CdS is found to be weak and these results are presented and discussed in this paper. | en_US |
dc.language.iso | en | en_US |
dc.publisher | University of Malaya, Malaysia | en_US |
dc.subject | Electrodeposition | en_US |
dc.subject | p-CdS | en_US |
dc.subject | n-CdS | en_US |
dc.title | Is it possible to grow stable p-type CdS layers suitable for fabrication of electronic devices? | en_US |
dc.type | Article | en_US |
Appears in Collections: | Chemistry |
Files in This Item:
File | Description | Size | Format | |
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SDS_Abs.Ext_21 abstract.pdf | 148.38 kB | Adobe PDF | View/Open |
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