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Results 1-10 of 12 (Search time: 0.003 seconds).
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Issue DateTitleAuthor(s)
1994Current gain increase in AlGaAs/GaAs heterojunction bipolar transistors using AlGaAs layer overgrowthKalingamudali, S.R.D.; Wismayer, A.C.; Woods, R.C.; Roberts, J.S.
1998Construction of a Near Ideal NanoammeterWijesundera, R.P.; Kalingamudali, S.R.D.; Jayasuriya, K.D.
1999Computational Study of I-V characteristics of ITO/Cu2 O/Metal junctions, Technical Session of Institute of PhysicsWijesinghe, W.M.P.L.; Siripala, W.; Jayasuriya, K.D.; Kalingamudali, S.R.D.
1999Computational Study of I-V characteristics of ITO/Cu2/Metal junctionsWijesinghe, W.M.P.L.; Siripala, W.; Jayasuriya, K.D.; Kalingamudali, S.R.D.
1994Recombination current reduction in AlGaAs/GaAs heterojunction bipolar transistors with polyimide depositionKalingamudali, S.R.D.; Wismayer, A.C.; Woods, R.C.
1997Perimeter and bulk recombination currents in GaAs homojunction diodes and heterojunction bipolar transistors after surface processingKalingamudali, S.R.D.; Wismayer, A.C.; Woods, R.C.; Wight, D.R.
1995New Experimental Interpretation for the Emitter-size Effect of AIGaAs/GaAs heterojunction bipolar transistors.Kalingamudali, S.R.D.; Woods, R.C.; Wismayer, A.C.
1994Experimental evaluation of separate contributions to ideality factor for the base surface recombination current in heterojunction bipolar transistorsKalingamudali, S.R.D.; Wismayer, A.C.; Woods, R.C.
1996IV characteristics of ITO/Cu2O/ metal junctionsPerera, L.D.R.D.; Siripala, W.; Kalingamudali, S.R.D.; Jayanetti, J.K.D.S.; de Silva, K.T.L.
1999Photoelectrochemical Characterisation of ZnSe coated Copper Indium Sulphide Thin Film ElectrodesWijesundera, R.P.; Siripala, W.; Jayasuriya, K.D.; Kalingamudali, S.R.D.; de Silva, K.T.L.; Jayanetti, J.K.D.S.

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