Observation of Defect Interface States at the Cu2O/CuxS Junction Using Thermally Stimulated IV Measurements.

Simple item page
dc.contributor.authorKalingamudali, S.R.D.en_US
dc.contributor.authorSiripala, W.en_US
dc.date.accessioned2014-11-19T04:46:57Z
dc.date.available2014-11-19T04:46:57Z
dc.date.issued2001
dc.description.abstractA simple method was developed to fabricate a Cu2O/CuxS p-n junction diode and I-V characteristics of the diode was measured at various temperatures. It was revealed that there are current transport mechanisms at the junction which are leading to high leakage currents. Namely, an oscillatory behaviour of the current with the temperature was observed under reverse bias conditions. This behaviour was interpreted as the thermally enhanced tunnelling at the junction due to the existence of defect interface states. We believe that proper surface treatment might reduce the density of interface states, and thereby improve the I-V characteristics of the diode.en_US
dc.identifier.departmentPhysicsen_US
dc.identifier.issn1391-5880en_US
dc.identifier.urihttp://repository.kln.ac.lk/jspui/handle/123456789/4145
dc.publisherSri Lankan Journal of Physicsen_US
dc.subjectInterfaces (Physical Sciences); Thermal analysis; Thermal analysis- Measurement; Simulation methods; Kalingaen_US
dc.titleObservation of Defect Interface States at the Cu2O/CuxS Junction Using Thermally Stimulated IV Measurements.
dc.typearticleen_US

Files

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Physics