Observation of Defect Interface States at the Cu2O/CuxS Junction Using Thermally Stimulated IV Measurements.

Abstract

A simple method was developed to fabricate a Cu2O/CuxS p-n junction diode and I-V characteristics of the diode was measured at various temperatures. It was revealed that there are current transport mechanisms at the junction which are leading to high leakage currents. Namely, an oscillatory behaviour of the current with the temperature was observed under reverse bias conditions. This behaviour was interpreted as the thermally enhanced tunnelling at the junction due to the existence of defect interface states. We believe that proper surface treatment might reduce the density of interface states, and thereby improve the I-V characteristics of the diode.