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A Photoelectrochemical Investigation of n- and p-type semi�conducting behaviour of Copper Oxide Films

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dc.contributor.author Siripala W en_US
dc.contributor.author Kumara K P en_US
dc.date.accessioned 2014-11-19T04:46:42Z
dc.date.available 2014-11-19T04:46:42Z
dc.date.issued 1989
dc.identifier.issn 0268-1242 (Print) ,1361-6641 (Online) en_US
dc.identifier.uri http://repository.kln.ac.lk/handle/123456789/4137
dc.description.abstract Copper(I) oxide films were prepared on copper substrates by exposing them to solutions containing Cu2+ ions, and it was observed that the photoresponse of these films electrodes in a photoelectrochemical cell is both n- and p-type. However, it was observed that the n-type behaviour of these film electrodes could be enhanced and the p-type behaviour could be reduced by adjusting the pH of the solution in which the oxide films had been prepared. The simultaneous existence of spatially separated n- and p-type regions in the Cu2O film is suggested as the possible reason for these observations. The anodic oxidation of copper was considered to be the origin of the p-type regions while the n-type regions were considered to be the result of the cathodic deposition of Cu2O. en_US
dc.publisher Semiconductor Science and Technology en_US
dc.subject Copper en_US
dc.subject Oxide; Photoelectrochemistry; Copper oxide films en_US
dc.title A Photoelectrochemical Investigation of n- and p-type semi�conducting behaviour of Copper Oxide Films
dc.type article en_US
dc.identifier.department Physics en_US


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