Abstract:
Thin films of n-type cuprous oxide (Cu2O) were potentiostatically electrodeposited on a Ti substrate in an acetate bath. Cu2O thin films were annealed at 500 �C for 30 min in air for growing p-type cupric oxide (CuO) thin films. n-Cu2O thin films were potentiostatically electrodeposited in an acetate bath on Ti/CuO electrodes in order to fabricate the p-CuO/n-Cu2O heterojunction. The structural, morphological and optoelectronic properties of the CuO/Cu2O heterojunction were studied using x-ray diffraction (XRD), scanning electron micrographs (SEMs) and dark and light current?voltage characteristics. XRD and SEM reveal that well-covered single phase polycrystalline Cu2O thin film on the Ti/CuO electrode can be possible at the deposition potential of ?550 mV versus the saturated calomel electrode (SCE) in an acetate bath. Photovoltaic characteristics further established the formation of the CuO/Cu2O heterojunction.
