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Please use this identifier to cite or link to this item: http://repository.kln.ac.lk/handle/123456789/9538
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dc.contributor.authorSiripala, W.-
dc.contributor.authorKumara, K.P.-
dc.date.accessioned2015-09-14T04:14:55Z-
dc.date.available2015-09-14T04:14:55Z-
dc.date.issued1988-
dc.identifier.citationSiripala, W. and Kumara, K.P. 1988. n-type electrical conductivity in cuprous oxide thin films. Journal of National Science Council, Sri Lanka, 16(1): 125-129.en_US
dc.identifier.issn0300-9254-
dc.identifier.urihttp://repository.kln.ac.lk/handle/123456789/9538-
dc.description.abstractElectrodeposited cuprous oxide thin films were investigated to determine whether their electrical conductivity is n-type or p-type. The experimental results based on the measurements of thermoelectric e.m.f, sheet resistance, dark and light current-voltage characteristics of Cu2O/CuxS and Cu2O/CuCNS heterojunctions reveal that the electrodeposited cuprous oxide films produce n-type electrical conductivity. These observations are in very good agreement with the previously reported n-type behavior of the electro-deposited Cu2O film electrodes in a photo-electrochemical cell.
dc.language.isoenen_US
dc.publisherNatural Resources, Energy and Science Authority of Sri Lankaen_US
dc.titlen-type electrical conductivity in cuprous oxide thin filmsen_US
dc.typeArticleen_US
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