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DC Field | Value | Language |
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dc.contributor.author | Gunawardhana, L.K.A.D.D.S. | - |
dc.contributor.author | Wijesundera, R.P. | - |
dc.contributor.author | Siripala, W. | - |
dc.date.accessioned | 2015-06-26T06:23:24Z | - |
dc.date.available | 2015-06-26T06:23:24Z | - |
dc.date.issued | 2013 | - |
dc.identifier.citation | Gunawardhana, L.K.A.D.D.S., Wijesundera, R.P. and Siripala, W., 2013. Fabrication of Cu2O Homojunction Solar Cell, Proceedings of the Annual Research Symposium 2013, Faculty of Graduate Studies, University of Kelaniya, pp 92. | en_US |
dc.identifier.uri | http://www.kln.ac.lk/ars-2013/ | - |
dc.identifier.uri | http://repository.kln.ac.lk/handle/123456789/8589 | - |
dc.description.abstract | Cu2O, a natural p-type semiconductor with a narrow band gap of 2 eV, is an attractive material for photovoltaic devices because of its nontoxicity and low production cost. In early investigations, p-Cu2O/metal Schottky junctions or p-Cu2O/n-type semiconductor heterojunctions were reported due to the absence of n-Cu2O. Cu2O homojunction attracts much attention with the invention of possibility of growth of the n-type Cu2O in 1986 by the method of electrodeposition. Recently, p-n Cu2O homojunction solar cells were fabricated by the electrochemical deposition of p-Cu2O layer, followed by n-Cu2O layer, in which the highest cell efficiency was reported to be 1.06%. However, performances of reported Cu2O homojunction solar cells are poor compared to the theoretical efficiency of 12%. It has been understood that one of the options to improve the Cu2O homojunction solar cell would be the formation of p- layer on top of the n-layer. In this study, the possibility of consecutive electrodeposition of p-Cu2O layer on n-Cu2O layer was examined to fabricate n-p Cu2O homojunction , which has not been reported earlier. The electrodeposition of Cu2O was studied in a three electrode electrochemical cell, under a potentiostatic condition of -200 mV Vs Ag/AgCl at 55o C. n-Cu2O films were cathodically deposited on Ti substrates in an aqueous solution of 0.1 M sodium acetate and 0.01 M cupric acetate for 60 min. Prior to the deposition of n-Cu2O, the solutions were adjusted to a pH 6.12 of using HCl. In order to fabricate an n-p homojunction, the electrodeposition of p-Cu2O was carried out on top of the previously deposited n-Cu2O layer. p-Cu2O was electrodeposited in an aqueous solution of 0.1 M sodium acetate and 0.001 M cupric acetate for 40 min. n-p Cu2O homojunction was characterized by using dark and light current-voltage measurements and spectral response measurements in a PEC containing 0.1 M sodium acetate solution. Dark and light current-voltage measurements and spectral response measurements reveal that the photoactivity of the device enhances due to the formation of n-p Cu2O homojunction. In conclusion, the study reveals the possibility of fabrication of n-p Cu2O homojunction by electrodeposition. | en_US |
dc.language.iso | en | en_US |
dc.publisher | University of Kelaniya | en_US |
dc.title | Fabrication of Cu2O Homojunction Solar Cell | en_US |
dc.type | Article | en_US |
Appears in Collections: | ARS - 2013 |
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Gunawardhana, L.K.A.D.D.S..pdf | 244.64 kB | Adobe PDF | View/Open |
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