Growth and Characterization of Copper Indium Diselenide

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DC Field	Value	Language
dc.contributor.author	Chithrani, B.D.	en_US
dc.contributor.author	de Silva, K.T.L.	en_US
dc.contributor.author	Jayanetti, J.K.D.S.	en_US
dc.contributor.author	Siripala, W.	en_US
dc.date.accessioned	2014-11-19T04:47:42Z
dc.date.available	2014-11-19T04:47:42Z
dc.date.issued	1996
dc.identifier.uri	http://repository.kln.ac.lk/handle/123456789/4167
dc.description.abstract	CuInSe2 thin films were prepared on Ti plates by electrodeposition from an aqueous solution containing CuCl2, InCl3 and SeO2. The deposition was carried out at -0.5V Vs SCE. X-ray diffraction and Scanning electron microscopy have been used to study the crystallographic and morphological properties of the samples. Effects of annealing in air have also been monitored. Apparent bulk structure changes have been observed during annealing. Annealing of films at 350 0C was found to result in the formation of CuInSe2 films having a chalcopyrite structure, indicating that the samples are of good quality.	en_US
dc.publisher	Proceedings of the Technical Session of Institute of Physics, Sri Lanka	en_US
dc.subject	Copper	en_US
dc.subject	Sri Lanka; Indium; Thin films; Diselenide	en_US
dc.title	Growth and Characterization of Copper Indium Diselenide
dc.type	article	en_US
dc.identifier.department	Physics	en_US
Appears in Collections:	Physics

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