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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Siripala, W. | en_US |
dc.contributor.author | Perera, L.D.R.D. | en_US |
dc.contributor.author | de Silva, K.T.L. | en_US |
dc.contributor.author | Jayanetti, J.K.D.S. | en_US |
dc.contributor.author | Dharmadasa, I.M. | en_US |
dc.date.accessioned | 2014-11-19T04:46:48Z | - |
dc.date.available | 2014-11-19T04:46:48Z | - |
dc.date.issued | 1996 | - |
dc.identifier.issn | 0927-0248 | en_US |
dc.identifier.uri | http://repository.kln.ac.lk/handle/123456789/4140 | - |
dc.description.abstract | Low temperature electrochemical deposition of cuprous oxide from aqueous solutions has been investigated. X-ray diffraction, scanning electron microscopy, optical absorption, and photo-response of liquid/cuprous oxide junctions have been used to study the deposits' crystallographic, morphological, optical, and electrical properties. Effects of annealing in air have been studied using the above mentioned methods. As-deposited cuprous oxide exhibits a direct band gap of 2.0 eV, and shows an n-type behaviour when used in an liquid/solid junction. Annealing below 300�C enhances the n-type photocurrent produced by the junction. Type conversion occurs after heat treatments in air at temperatures above 300�C. No apparent bulk structure changes have been observed during annealing below this temperature, but heat treatments above this temperature produce darker films containing cupric oxide and its complexes with water. | en_US |
dc.publisher | Solar Energy Materials and Solar Cells | en_US |
dc.subject | Copper | en_US |
dc.subject | Oxide; Electrocution | en_US |
dc.subject | Sri Lanka; Electroforming; Electroplating; Technique; Annealing of metals | en_US |
dc.title | Study of Annealing Effects of Cuprous Oxide Grown by Electrodepostion Technique | - |
dc.type | article | en_US |
dc.identifier.department | Physics | en_US |
Appears in Collections: | Physics |
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