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Please use this identifier to cite or link to this item: http://repository.kln.ac.lk/handle/123456789/4089
Title: Potentiostatic electrodeposition of cuprous oxide thin films
Authors: Perera, L.D.R.D.
Siripala, W.
de Silva, K.T.L.
Keywords: Cuprous oxide
electrodeposition
thin films
Issue Date: 1996
Publisher: Journal of the National Science Council of Sri Lanka
Abstract: Current-potential scans were used to investigate the electrodeposition of coprous oxide thin films in an acetate bath. We found that a narrow potential domain, from OV vs SCE, is available for the potentiostatic electrodeposition of cuprous oxide thin films and extension of this domain towards more cathodic potentials will result in the co-deposition of copper. These results were further verified by the x-ray diffraction measurements on the thin films formed by the electrodeposition at various electrode potensials. Optical transmission studies revealed that electrodeposited cuprous oxide is a direct band gap semiconductor of 2.0 eV.
URI: http://repository.kln.ac.lk/handle/123456789/4089
Appears in Collections:Physics

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