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dc.contributor.authorWijesundera, R.P.en_US
dc.contributor.authorSiripala, W.en_US
dc.contributor.authorJayasuriya, K.D.en_US
dc.contributor.authorKalingamudali, S.R.D.en_US
dc.contributor.authorde Silva, K.T.L.en_US
dc.contributor.authorJayanetti, J.K.D.S.en_US
dc.contributor.authorSamantilleke, A.P.en_US
dc.contributor.authorDharmadasa, I.M.en_US
dc.date.accessioned2014-11-19T04:45:28Z
dc.date.available2014-11-19T04:45:28Z
dc.date.issued1999
dc.identifier.citationRP Wijesundara, W Siripala, KD Jayasuriya, SRD Kalingamudali, KTL De Silva, JKDS Jayanetti, AP Samantilleke and IM Dharmadasa, 1999, Growth and characterisation of CuInS2 thin films, Proc. Wkshp. Low Cost Elect. Mat. and Solar Cells, Peradeniya, Sri Lanka, pp. 40-45
dc.identifier.urihttp://repository.kln.ac.lk/handle/123456789/4058
dc.description.abstractCopper Indium Disulphide thin films were grown by electrodeposition of Cu-ln alloy followed by sulphurisation in H2S gas. It was observed that the ionic concentration of Cu2+/ In3+ in the electrodepositing bath determines the composition of the materials formed after the sulphurisation. CuInS2 thin films having the chalcopyrite crystal structure can be produced using this technique and the films are n-type semiconductors.en_US
dc.subjectFabricationen_US
dc.subjectCharacterisationen_US
dc.subjectCuInS2/ZnSe/Metal Structuresen_US
dc.subjectSolar Cell Applications; Kalingaen_US
dc.titleGrowth and Characterisation of CuInS2 Thin Films
dc.typeconference_itemen_US
dc.identifier.departmentPhysicsen_US
Appears in Collections:Physics

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