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Title: | Current gain increase in AlGaAs/GaAs heterojunction bipolar transistors using AlGaAs layer overgrowth |
Authors: | Kalingamudali, S.R.D. Wismayer, A.C. Woods, R.C. Roberts, J.S. |
Keywords: | Current gain increase AIGaAs/GaAs heterojunction bipolar transistors Overgrowth; Kalinga |
Issue Date: | 1994 |
Publisher: | Applied Physics Letters |
Abstract: | Reduction of the surface recombination current components in Npn AlGaAs/GaAs heterojunction bipolar transistors has been achieved by overgrowing the emitter?mesas with an AlGaAs layer approximately 0.5 ?m thick. It was observed that the n=2 recombination current was reduced by ?90%, to about 10% of the original value, with a corresponding 13?fold increase in current gain for 270?20 ?m2 devices. In addition, devices with the same emitter?base area, but significantly different perimeters, were observed to have similar current gains and n=2 recombination current values. This was in contrast to devices fabricated without an overgrowth layer. These results suggest that the overgrowth layer causes a very significant reduction in the perimeter recombination current. |
URI: | http://repository.kln.ac.lk/jspui/handle/123456789/4052 |
ISSN: | 0003-6951 (print) , 1077-3118 (online) |
Appears in Collections: | Physics |
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