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Title: | Effects of annealing on the properties and structure of electrodeposited semiconducting Cu?O thin films |
Authors: | Wijesundera, R.P. Hidaka, M. Koga, K. Sakai, M. Siripala, W. Choi Jae-Young Sung, N.E. |
Issue Date: | 2007 |
Publisher: | Physica Status Solidi (basic solid state physics) |
Citation: | RP Wijesundera, M Hidaka, K Koga, M Sakai, W Siripala, Jae-Young Choi, Nark Eon Sung, 2007, Effects of annealing on the properties and structure of electrodeposited semiconducting Cu-O thin films, Physica Status of Solidi (b), 244 (12), pp. 4629-4642 |
Abstract: | The structures and the electronic states in electrodeposited semiconductor Cu?O thin films have been investigated for each annealing temperature (TA) by X-ray diffraction (XD) and X-ray absorption spectroscopy (XAS) near the Cu K edge using synchrotron radiation. The thin films prepared as grown and annealed at TA ? 175 �C, 200 �C ? TA ? 300 �C, TA = 400 �C are characterized mainly by the pure Cu2O-type structure, the pseudo-Cu2O-type having a superlattice structure, and two phases of Cu2O-type and CuO-type structures, respectively, while the film annealed at TA = 500 �C is single-phase CuO-type. The XAS spectra suggest that there is a structural phase transition occurring at about 400 �C, which induces a modulation of the local structure around Cu ions observed in the extended X-ray absorption fine structure (EXAFS) and the occupational electronic band states of Cu-4p localized just above the Fermi level, taken from X-ray absorption near edge structure (XANES). The open-circuit voltage suggests that the photosensitivity of the Cu?O thin films strongly depends on the annealing treatment and shows a crossover from an n-type to a p-type semiconductor. (? 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
URI: | http://repository.kln.ac.lk/handle/123456789/3988 |
Appears in Collections: | Physics |
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