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Title: | Study of annealing effects of cuprous oxide grown by electrodeposition technique |
Authors: | Siripala, W. Perera, L.D.R.D. de Silva, K.T.L. Jayanetti, J.K.D.S. Dharmadasa, I.M. |
Keywords: | Copper oxide; Electrodeposition; Thermal annealing; Spectral response |
Issue Date: | 1996 |
Publisher: | Solar Energy Materials and Solar Cells |
Abstract: | Low temperature electrochemical deposition of cuprous oxide from aqueous solutions has been investigated. X-ray diffraction, scanning electron microscopy, optical absorption, and photo-response of liquid/cuprous oxide junctions have been used to study the deposits' crystallographic, morphological, optical, and electrical properties. Effects of annealing in air have been studied using the above mentioned methods. As-deposited cuprous oxide exhibits a direct band gap of 2.0 eV, and shows an n-type behaviour when used in an liquid/solid junction. Annealing below 300�C enhances the n-type photocurrent produced by the junction. Type conversion occurs after heat treatments in air at temperatures above 300�C. No apparent bulk structure changes have been observed during annealing below this temperature, but heat treatments above this temperature produce darker films containing cupric oxide and its complexes with water. |
URI: | http://repository.kln.ac.lk/handle/123456789/3978 |
Appears in Collections: | Physics |
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