Electrodeposition of ZnS Thin Films by Complexing Agent‑Free Electrolyte Containing Sodium Thiosulfate as the Sulfur Precursor

Abstract

Thin films of zinc sulphide (ZnS) were prepared by a facile, economical, and scalable electrochemical method as a buffer layer for a CdS/CdTe based solar cell. Herein, a three-electrode cell in a complexing agent-free electrolyte containing 0.1 mol/L Na2S2O3 and 0.1 mol/L ZnSO4 was employed for the deposition of ZnS. The electrodeposition conditions (temperature: 30°C, pH: 4.2, cathodic potential: −1.10 V and deposition time: 90 min) were identified to grow an ideal thin film of ZnS on fluorine-doped tin oxide (FTO)-coated glass substrate, applying moderate stirring of 60 rpm. In material characterization of heat-treated samples (300°C, 10 min), the optical absorption measurement depicted a direct energy bandgap of 3.64 eV with low light absorbance and a blueshift from bulk ZnS. Scanning electron microscopy and atomic force microscopy studies demonstrated the uniform distribution of ZnS grains over the FTO glass substrate, and x-ray diffraction analysis revealed an amorphous structural nature of ZnS. The charge carrier density and flat-band potential of the ZnS material were determined as 1.19 × 10− 19 cm− 3 and −0.59 V, respectively, by Mott–Schottky analysis.