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DC Field | Value | Language |
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dc.contributor.author | Fernando, W.T.R.S. | - |
dc.contributor.author | Jayathileka, K.M.D.C. | - |
dc.contributor.author | Siripala, W. | - |
dc.contributor.author | Wijesundera, R.P. | - |
dc.date.accessioned | 2019-01-02T03:20:33Z | - |
dc.date.available | 2019-01-02T03:20:33Z | - |
dc.date.issued | 2018 | - |
dc.identifier.citation | Fernando, W.T.R.S., Jayathileka, K.M.D.C., Siripala,W. and Wijesundera, R.P. (2018). Fabrication of CZTS/Cu2O Solar Cell. 19th Conference on Postgraduate Research, International Postgraduate Research Conference 2018, Faculty of Graduate Studies,University of Kelaniya, Sri Lanka. p51 | en_US |
dc.identifier.uri | http://repository.kln.ac.lk/handle/123456789/19229 | - |
dc.description.abstract | Cu2ZnSnS4 (CZTS) and Cu2O are two promising materials for application in low-cost and environmentally-friendly thin film solar cells due to their optoelectronic properties. Among the various growth techniques available for CZTS and Cu2O, electrodeposition is an attractive technique because of its simplicity, low-cost and easy to control the properties of the deposits. In order to grow CZTS on Mo substrate, Cu thin film was electrodeposited on Mo substrate at –0.89 V vs Ag/AgCl reference electrode (RE) in an electrochemical cell containing 0.4 M CuSO4, 3 M lactic acid and NaOH at pH of 11. Deposition of Sn thin film on Mo/Cu electrodes was carried out at -1.2 V vs Ag/AgCl RE in an electrochemical cell containing 0.055 M SnCl2, 2.25 M NaOH and 8 ml of sorbitol. Zn thin film was electrodeposited on Mo/Cu/Sn at -1.2 V vs Ag/AgCl RE in an electrochemical cell containing 0.2 M ZnSO4. In order to form CZTS material on Mo substrate, Mo/Cu/Sn/Zn thin film electrodes were annealed at 55 °C for 60 min in H2S. In order to fabricate CZTS/Cu2O heterojunction, n-Cu2O thin film was potentiastatically electrodeposited on Mo/CZTS at -0.52 V vs Ag/AgCl RE in electrochemical cell containing 0.45 M CuSO4, 3.0 M lactic acid and 4.0 M NaOH. pH of the bath was adjusted to 9.3 by adding NaOH and the temperature of the bath was maintained at 60 °C. In order to make front contact to the device, thin Au spots (2×2 mm2) were deposited on Cu2O by using the sputtering technique. Materials and device were characterised using XRD, SEM, spectral response, C-V and I-V measurements. In this preliminary study, device exhibited open circuit voltage (VOC) of 200 mV and short circuit current density (JSC) of 0.75 mA cm-2. This result is encouraging since CZTS/Cu2O heterojunction haven’t been reported in the literature. It is planning to improve photoactivity of the device by employing pre and post treatments (annealing and surface treatments). | en_US |
dc.language.iso | en | en_US |
dc.publisher | 19th Conference on Postgraduate Research, International Postgraduate Research Conference 2018, Faculty of Graduate Studies,University of Kelaniya, Sri Lanka | en_US |
dc.subject | CZTS | en_US |
dc.subject | Cu2O | en_US |
dc.subject | Electrodeposton | en_US |
dc.subject | I-V Charateristics | en_US |
dc.subject | Solar Cell | en_US |
dc.title | Fabrication of CZTS/Cu2O Solar Cell. | en_US |
dc.type | Article | en_US |
Appears in Collections: | IPRC - 2018 |
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