Preparation of CuInS2 thin films by electrodeposition and sulphurisation for applications in solar cells

dc.contributor.authorWijesundera, R.P.en_US
dc.contributor.authorSiripala, W.en_US
dc.date.accessioned2014-11-19T04:45:15Z
dc.date.available2014-11-19T04:45:15Z
dc.date.issued2004
dc.description.abstractThin films of copper indium disulphide (CuInS2) were grown on Ti substrates by sulpherisation of Cu?In precursors prepared by sequentially electrodeposited Cu and In layers. CuInS2 films were characterised using X-ray diffraction (XRD), scanning electron micrographs (SEM), diffuse optical reflectance, spectral response and capacitance?voltage (C?V) measurements. It was observed that the Cu/In atomic ratio of initial Cu?In precurser determines the composition of the CuInS2 films. XRD measurements revealed that single-phase polycrystalline CuInS2 thin films can be obtained by optimising the thickness of the Cu and In layers. SEM showed that polycrystalline CuInS2 thin films are having crystallites of size of ?1?3 ?m. Thin film of ZnSe was electrodeposited on CuInS2 film in order to fabricate a solar cell. CV and photovoltaic characteristics established the formation of the CuInS2/ZnSe heterojunction.en_US
dc.identifier.citationRP Wijesundera, W Siripala, 2004, Preparation of CuInS2 Thin Films by Electrodeposition and sulphurisation for Applications in Solar Cells, Solar Energy Materials and Solar Cells 81,pp. 147-154
dc.identifier.departmentPhysicsen_US
dc.identifier.issn0927-0248en_US
dc.identifier.uri
dc.identifier.urihttp://repository.kln.ac.lk/handle/123456789/4045
dc.publisherSolar Energy Materials and Solar Cellsen_US
dc.subjectCuInS2; Electrodeposition; Cu?In precursor; CuInS2/ZnSe solar cellen_US
dc.titlePreparation of CuInS2 thin films by electrodeposition and sulphurisation for applications in solar cells
dc.typearticleen_US

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