Pentacene acoustic charge transfer devices
| dc.contributor.author | Kalingamudali, S.R.D. | en_US |
| dc.contributor.author | Shao, H. | en_US |
| dc.contributor.author | Woods, R.C. | en_US |
| dc.contributor.author | Neelam, R. | en_US |
| dc.contributor.author | Singh, V. | en_US |
| dc.date.accessioned | 2014-11-19T04:46:06Z | |
| dc.date.available | 2014-11-19T04:46:06Z | |
| dc.date.issued | 2011 | |
| dc.description.abstract | Acoustic charge transfer (ACT) devices use a charge transfer channel formed from a thin-film of the organic semiconductor pentacene deposited on the surfaces of either LiNbO(3) 0r Bi(12)GeO(20)substrates. Organic semiconductor is chosenbecause of the low costof deposition. Insulating Bi(12)GeO(20) substrate is favored over LiNbO(3) since it has a comparable piezoelectric constant, so that efficient surface acoustic wave generation is readily obtained. In addition, the Bi(12)GeO(20)substrate has a higher acoustic potential coefficient so that a pentacene acoustic charge transfer (PACT) device requires a lower power input compared to LiNbO(3) substrate. | en_US |
| dc.identifier.department | Physics | en_US |
| dc.identifier.uri | http://repository.kln.ac.lk/handle/123456789/4106 | |
| dc.subject | Pentacene; Acoustic charge transfer devices; Kalinga | en_US |
| dc.title | Pentacene acoustic charge transfer devices | |
| dc.type | conference_item | en_US |
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