Electrolyte electroreflectance study of surface optimization of n-CuInSeâ in photoelectrochemical solar cells

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dc.contributor.authorShen, Wu-Mainen_US
dc.contributor.authorSiripala Wen_US
dc.contributor.authorTomkiewicz, M.en_US
dc.contributor.authorCahen, D.en_US
dc.date.accessioned2014-11-19T04:45:44Z
dc.date.available2014-11-19T04:45:44Z
dc.date.issued1986
dc.description.abstractElectrolyte electroreflectance is used to show that the main effect of Br2/MeOH etching of CuInSe2 is to remove the pinning of the Fermi level, which is due to a monolayer of states located 0.17V positive to the potential of CuInSe2 the solution. The flatband potential of in polysulfide solution was found to be ?0.62V vs. the solution potential, while in polyiodide solution it is shifted to ?0.70V vs. the potential of that solution. This shift can explain some of the improvement in performance in polyiodide compared to polysulfide. The bandgap of CuInSe2 was found to be a direct transition at 1.01 eV with a three?dimensional critical point.en_US
dc.identifier.departmentPhysicsen_US
dc.identifier.issn0013-4651(Print ) ,1945-7111(Online)en_US
dc.identifier.urihttp://repository.kln.ac.lk/handle/123456789/4075
dc.publisherJournal of Electrochemical Societyen_US
dc.subjectSurface statesen_US
dc.subjectRecombinationen_US
dc.subjectElectrolyte interfaceen_US
dc.titleElectrolyte electroreflectance study of surface optimization of n-CuInSeâ in photoelectrochemical solar cells
dc.typeArticleen_US

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