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Growth and Characterization of Copper Indium Diselenide

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dc.contributor.author Chithrani, B.D. en_US
dc.contributor.author de Silva, K.T.L. en_US
dc.contributor.author Jayanetti, J.K.D.S. en_US
dc.contributor.author Siripala, W. en_US
dc.date.accessioned 2014-11-19T04:47:42Z
dc.date.available 2014-11-19T04:47:42Z
dc.date.issued 1996
dc.identifier.uri http://repository.kln.ac.lk/handle/123456789/4167
dc.description.abstract CuInSe2 thin films were prepared on Ti plates by electrodeposition from an aqueous solution containing CuCl2, InCl3 and SeO2. The deposition was carried out at -0.5V Vs SCE. X-ray diffraction and Scanning electron microscopy have been used to study the crystallographic and morphological properties of the samples. Effects of annealing in air have also been monitored. Apparent bulk structure changes have been observed during annealing. Annealing of films at 350 0C was found to result in the formation of CuInSe2 films having a chalcopyrite structure, indicating that the samples are of good quality. en_US
dc.publisher Proceedings of the Technical Session of Institute of Physics, Sri Lanka en_US
dc.subject Copper en_US
dc.subject Sri Lanka; Indium; Thin films; Diselenide en_US
dc.title Growth and Characterization of Copper Indium Diselenide
dc.type article en_US
dc.identifier.department Physics en_US


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