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A Study of CuInS2 Thin Films for Photovoltaic Applications

Show simple item record Wijesundera, R.P. en_US Nadesalingam, M.P. en_US Siripala, W. en_US Jayasuriya, K.D. en_US Kalingamudali, S.R.D. en_US Jayanetti, J.K.D.S. en_US de Silva, K.T.L. en_US 2014-11-19T04:47:42Z 2014-11-19T04:47:42Z 1999
dc.identifier.citation RP Wijesundara, MP Nadesalingam, W Siripala, KD Jayasuriya, SRD Kalingamudali, JKDS Jayanetti and KTL De Silva, (1999) A study of CuInS2 thin films for photovoltaic applications, Proc. 15th Tech. Sess. Inst. Phys., Sri Lanka, pp. 52-58
dc.description.abstract Thin films of copper indium disulphide (CuInS2) on Ti Substrate were prepared by annealing potentiastatically electrodeposited Cu-In alloy in H2S gas at 5500 C. Films were characteristised by X-ray diffraction (XRD), scanning electron microscopy (SEM), and spectral response in a polysulphide electrolyte. XRD measurements revealed the formation of the polysrystaline CuInS2 thin films and the abscence of any other phases. SEM showed the formation of crystallites having the size about 0.2 ?m. Variations of spectral response, open-circuit voltage (Voc) and short circuit current (Isc) with annealing in air have been studied. As deposited CuInS2 films exhibit a direct band gap of 1.5 eV, and shows n-type behaviour when used in a Photoelectrochemical (PEC) cell. Heat treatment shows a considerable enhancement of the photoresponse. en_US
dc.publisher Proceedings of the Technical Session of Institute of Physics en_US
dc.subject Thin films; Photovoltaic cells; CUInS2; Kalinga en_US
dc.title A Study of CuInS2 Thin Films for Photovoltaic Applications
dc.type article en_US
dc.identifier.department Physics en_US

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