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Electrodeposition and Characterisation of CuInSe2 for applications in thin film solar cells

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dc.contributor.author de Silva, K.T.L. en_US
dc.contributor.author Priyantha, W.A.A. en_US
dc.contributor.author Jayanetti, J.K.D.S. en_US
dc.contributor.author Chithrani, B.D. en_US
dc.contributor.author Siripala, W. en_US
dc.contributor.author Blake, K. en_US
dc.contributor.author Dharmadasa, I.M. en_US
dc.date.accessioned 2014-11-19T04:46:55Z
dc.date.available 2014-11-19T04:46:55Z
dc.date.issued 2001
dc.identifier.issn 0040-6090 en_US
dc.identifier.uri http://repository.kln.ac.lk/handle/123456789/4144
dc.description.abstract Copper indium diselenide (CuInSe2) layers have been grown at room temperature by electrochemical deposition technique in an aqueous medium. Resulting thin films have been characterised using XRD, XRF, XPS, GDOES and SEM for structural, stoichiometric and morphological properties. A considerable influence of the deposition potential on the atomic composition of In and Se present in the film was observed. Cu composition remains the same within the deposition potentials used in this investigation. The deposited layers are polycrystalline and annealing at 350�C for 30 min improves the crystallinity. The film quality deteriorates due to dissociation when annealed at temperatures above 350�C. Excessive annealing results in a surface which is depleted in Cu and rich in In and Se. en_US
dc.publisher Thin Solid Films en_US
dc.subject Electrocution; Thin films; Solar cells en_US
dc.subject Sri Lanka; CuInSe2 en_US
dc.title Electrodeposition and Characterisation of CuInSe2 for applications in thin film solar cells
dc.type article en_US
dc.identifier.department Physics en_US


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