High efficient multi-junction photovoltaic cell based on indium-phosphide-Oxide, indium-gallium-arsenide and indium-gallium-antimony

dc.contributor.author	Abdulla-Al-Galib, M.	en_US
dc.contributor.author	Barua, S.	en_US
dc.contributor.author	Salam, K.M.A.	en_US
dc.contributor.author	Awal, M.A.	en_US
dc.contributor.author	Wijesundera, R.P.	en_US
dc.date.accessioned	2014-11-19T04:46:37Z
dc.date.available	2014-11-19T04:46:37Z
dc.date.issued	2011
dc.identifier.citation	Mir Abdulla-Al-Galib, Soumen Barua, K. M. A. Salam, Mohammad A. Awal, R. P. Wijesundera, 2011, High Efficient Multi-junction Photovoltaic Cell based on Indium-Phosphide-Oxide, Indium-Gallium-Arsenide and Indium-Gallium-Antimony, International Conference on Advances in Electrical Engineering (ICAEE-2011), Dhaka, Bangladesh, 19-21 December
dc.identifier.uri	http://repository.kln.ac.lk/handle/123456789/4134
dc.publisher	International Conference on Advances in Electrical Engineering (ICAEE-2011	en_US
dc.subject	Photovoltaic cells	en_US
dc.subject	Sri Lanka; Phosphides; Indium; Single-junction; multi-junction; Anti-reflectve coating	en_US
dc.title	High efficient multi-junction photovoltaic cell based on indium-phosphide-Oxide, indium-gallium-arsenide and indium-gallium-antimony
dc.type	article	en_US
dc.identifier.department	Physics	en_US