| dc.contributor.author | Siripala W | en_US |
| dc.contributor.author | Kumara K P | en_US |
| dc.date.accessioned | 2014-11-19T04:45:47Z | |
| dc.date.available | 2014-11-19T04:45:47Z | |
| dc.date.issued | 1990 | |
| dc.identifier.uri | http://repository.kln.ac.lk/handle/123456789/4080 | |
| dc.description.abstract | A simple electrochemical method was developed to fabricate a Cu2O/CuxS heterojunction and it was then used in preparing a thin film photovoltaic soar cell. Cu2O was prepared by the method of electrodeposition and CuxS was coated on Cu2O by a simple dipping method. The photovoltaic properties of the cell could be improved significantly by heat treatment in air. The maximum conversion efficiency of the cell was 0.1% and V oc = 180mV and I sc = 2.0mA/cm2 under A M 1 artificial illumination. | en_US |
| dc.publisher | Journal of the National Science Council, Sri Lanka | en_US |
| dc.subject | p-n diode | en_US |
| dc.subject | solar cell | en_US |
| dc.subject | photoresponse | en_US |
| dc.title | Photovolatic properties of Cu2O/CuxS heterojunction | |
| dc.type | article | en_US |
| dc.identifier.department | Physics | en_US |
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