Browsing Physics by Issue Date

The Interrelation Between the Potential Distribution and the Dark Charge Transfer Across n-TiO2 - Aqueous Electrolyte Interface

Tomkiewicz M; Siripala W (Symposia on Photoelectrochemical Process and Measurements Techniques for Photoelectrochemical Solar Cells, 1981)

Direct Observation of Surface States at the TiO2 Electrolyte Interface

Siripala W; Tomkiewicz M (Journal of Electrochemical Society, 1981)

Relaxation Spectrum Analysis was suggested as a general technique for mearsurements of charge accumulation modes and their corresponding relaxation times at the space charge layer of a semiconductor ...

The specific heat capacity of GE varnish (200-400K)

Jayasuriya, K.D.; Campbell, S.J.; Stewart, A.M. (Journal of Physics E: Scientific Instruments, 1982)

The specific heat capacity of GE varnish, a commonly used adhesive and insulator, is found to vary linearly with temperature over the range 200-330K. The deviation of the heat capacity above this temperature is associated ...

Interactions Between Photoinduced and Dark Charge Transfer across n-TiO[sub 2]Aqueous Electrolyte Interface

Siripala W; Tomkiewicz M (Journal of Electrochemical Society, 1982)

An intermediate of the dark reductive reaction of with an aqueous electrolyte was identified. This intermediate forms surface states on the semiconductor. The energy and surface concentration of these states were evaluated ...

Electroreflectance and photoinduced charge seperation in eletrochemically doped trans-polyacetylene liquid junction device

Peramunage, D.; Tomkiewicz, M.; Ginley, D.S. (Chemical Physics Letters, 1983)

Liquid junction solar cells, made from electrochemically doped p-type trans-polyacetylene in contact with aqueous solution of methyl viologen, were constructed. The turn-on potential was found to be +1.0 V versus SCE. The ...

Observation of Intrinsic Surface States at the TiO2 Aqueous-Electrolyte Interface by Sub Band-Gap Electroreflectance Spectroscopy

Siripala W; Tomkiewicz M (Physical Review Letters, 1983)

Surface states were detected with sub?band-gap electroreflectance spectroscopy in the presence of electrolytes that can adsorb on the surface of TiO2. The energy of these states is located 1.3 eV below the conduction band ...

Surface Recombination at n-TiO2 Electrodes in Photoelectrolytic Solar Cells

Siripala W; Tomkiewicz M (Journal of Electrochemical Society, 1983)

The photocurrent?potential behavior of photoelectrodes in liquid junction configuration is investigated. The Gartner model is modified to include the surface recombination. Impedance and photocurrent?potential measurements ...

The critical specific heat of terbium

Jayasuriya, K.D.; Gopal, E.S.R.; Campbell, S.J.; Stewart, A.M. (Journal of Physics F: Metal Physics, 1983)

Specific heat measurements have been carried out on a high-purity single crystal of terbium of mass 3.734 g between temperatures of 200 and 400K. The data around the Neel temperature TN, have been analysed in terms of the ...

Characterization of Surface States at a Semiconductor Electrolyte Interface by Electroreflectance Spectroscopy

Tomkiewicz M; Siripala W (Journal De Physique, 1983)

Supra bandgap and subband gap Electrolyte Electroreflectance is being used to characterize surface states at semiconductor liquid interfaces. The surface states can manifest themselves either through direct optical transitions ...

Electrolyte Electroreflectance Study of CdIn2Se4 Liquid Junction Solar cells

Tomkiewicz M; Siripala W (American Physical Soc. Meeting, Los Angeles,USA, 1983)

Electrolyte Electroreflectance of Single-Crystal CdIn2Se4 in a Photoelectrochemical Solar Cell

Tomkiewicz M; Siripala W (Journal of Electrochemical Society, 1984)

Electroreflectance was used to evaluate the optical properties of in polysulfide solution, before and after photoetching. The variations of signal intensity with electrode potential were used to trace the band position ...

Specific heat study of the transition from ferromagnetism to antiferromagnetism in terbium

Jayasuriya, K.D.; Campbell, S.J.; Stewart, A.M.; Gopal, E.S.R. (Journal of Magnetism and Magnetic Materials, 1984)

The specificheat of single crystal terbium has been measured over the range 200?400 K. A value for the latent heat of (13.6 � 0.6) J mol?1 is obtained at the first order antiferromagnetic to ferromagnetic transition ...

Magnetic transitions in dysprosium: A specific-heat study

Jayasuriya, K.D.; Campbell, S.J.; Stewart, A.M. (Physical Review B, 1985)

The magnetic transitions of the heavy rare-earth metal dysprosium have been examined by specific-heat measurements using a small single crystal (0.6782 g) and a large polycrystalline sample (43.25 g). A value for the latent ...

A specific heat study of natural haematite around the Morin transition and the effects of entrapped water

Jayasuriya, K.D.; Stewart, A.M.; Campbell, S.J. (Journal of Physics and Chemistry of Solids, 1985)

The Morintransition in samples of natural haemitite has been examined by specificheat and M�ssbauer measurements. Specificheat measurements on as-received samples reveal an anomaly at ? 273.2 K and irregular behaviour at ...

Specific heat study of a holmium single crystal

Jayasuriya, K.D.; Campbell, S.J.; Stewart, A.M. (Journal of Physics F: Metal Physics, 1985)

The magnetic transition at the Neel temperature, TN, of the heavy rare-earth metal holmium has been examined by specific heat measurements. The transition at TN=(132.245+or-0.080)K is found to be continuous and the data ...

The specific heat of samarium metal (80-400 K)

Jayasuriya, K.D.; Stewart, A.M.; Campbell, S.J. (Materials Chemistry and Physics, 1986)

We have measured the specific heat of several high purity polycrystalline specimens of samarium metal over the temperature range 80 K to 400 K. A broad peak is observed at TNh ~106K, the temperature at which antiferromagnetic ...

Optical Investigation of the Electrodeposited Cuprous Oxide Film Electrodes using Photocurrent Spectroscopy

Siripala W (1986)

Thermally grown Cuprous Oxide has known as a p-type semiconductor and the p-type conductivity is attributed to the Copperion vacancies created in the crystal lattice during the oxide formation. However, we have observed, ...

Electrolyte electroreflectance study of surface optimization of n-CuInSeâ in photoelectrochemical solar cells

Shen, Wu-Main; Siripala W; Tomkiewicz, M.; Cahen, D. (Journal of Electrochemical Society, 1986)

Electrolyte electroreflectance is used to show that the main effect of Br2/MeOH etching of CuInSe2 is to remove the pinning of the Fermi level, which is due to a monolayer of states located 0.17V positive to the potential ...

Observation of n-type Photoconductivty in Electrodeposited Copper Oxide Film Electrodes in a Photoelectrochemical cell

Siripala, W.; Jayakody, J.R.P. (Solar Energy Materials, 1986)

Copper oxide films were cathodically deposited on various metal substrates (Cu, Ti and Pt) using a basic solution of CuSO4, and it is found that they produce n-type photoconductivity in a photoelectrochemical cell. The ...

n-type electrical conductivity in cuprous oxide thin films

Siripala, W.; Kumara, K.P. (Natural Resources, Energy and Science Authority of Sri Lanka, 1988)

Electrodeposited cuprous oxide thin films were investigated to determine whether their electrical conductivity is n-type or p-type. The experimental results based on the measurements of thermoelectric e.m.f, sheet resistance, ...

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