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Electrodeposited Cu2O homojunction solar cells: Fabrication of a cell of high short circuit photocurrent

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dc.contributor.author Wijesundera, R.P.
dc.contributor.author Gunawardhana, L.K.A.D.D.S.
dc.contributor.author Siripala, W.
dc.date.accessioned 2016-10-10T06:51:17Z
dc.date.available 2016-10-10T06:51:17Z
dc.date.issued 2016
dc.identifier.citation Wijesundera, R.P., Gunawardhana, L.K.A.D.D.S. and Siripala, W. 2016. Electrodeposited Cu2O homojunction solar cells: Fabrication of a cell of high short circuit photocurrent. Solar Energy Materials and Solar Cells, 157: 881-886. en_US
dc.identifier.uri http://www.sciencedirect.com/science/article/pii/S0927024816302306
dc.identifier.uri http://repository.kln.ac.lk/handle/123456789/14506
dc.description.abstract A Cu2O homojunction solar cell was fabricated using a consecutive electrodeposition method of deposition of an n-Cu2O film followed by a p-Cu2O film, in two different acetate baths. Both n-type and p-type film growth conditions were optimized separately to yield high photocurrents in a photoelctrochemical (PEC) cell. Further, the resulted bi-layer films were investigated in the PEC for the verification of the formation of the p-n homojunction. In addition, p-Cu2O film surfaces of the bi-layers were sulphided using Na2S and (NH4)2S in order to improve the photoresponse of the homojunction before depositing a Au film for the solar cell device. The structural, morphological and optoelectronic properties of the Cu2O films were investigated using X-ray diffraction (XRD), scanning electron micrographs (SEMs), dark and light current–voltage (I-V) and spectral response measurements and observed that the films are of good quality. Incident photon to current efficiency (IPCE) and I-V characteristics of the solar cell device demonstrated that the Cu2O homojunction can produce a high short circuit current density Jsc. However, the overall conversion efficiency of the device is low due to poor fill factor and Voc. The solar cell characteristics of the structure Ti/n-Cu2O/p-Cu2O/Au were Voc=287.0±0.1 mV, Jsc=12.4±0. 1 mA/cm2, FF=25±2% and η=0.89±0.02%, under AM 1.5 illumination. The record high Jsc value of the device demonstrates the prospect being improved the efficiency of Cu2O homojunction solar cells by optimizing deposition, pretreatment and post treatment processes. en_US
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.subject Electrodeposition en_US
dc.subject Cuprous oxide en_US
dc.subject Thin film en_US
dc.subject Cu2O homojunction en_US
dc.subject Sulphidation en_US
dc.title Electrodeposited Cu2O homojunction solar cells: Fabrication of a cell of high short circuit photocurrent en_US
dc.type Article en_US


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