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Optimization of three growth parameters for electrodeposition of CdS thin film semiconductor; pH, deposition temperature and deposition voltage in a stable electrolyte

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dc.contributor.author Atapattu, H.Y.R.
dc.contributor.author De Silva, D.S.M.
dc.contributor.author Pathiratne, K.A.S.
dc.date.accessioned 2016-01-21T04:21:16Z
dc.date.available 2016-01-21T04:21:16Z
dc.date.issued 2015
dc.identifier.citation Atapattu, H.Y.R., De Silva, D.S.M. and Pathiratne, K.A.S. 2015. Optimization of three growth parameters for electrodeposition of CdS thin film semiconductor; pH, deposition temperature and deposition voltage in a stable electrolyte, p. 212, In: Proceedings of the International Postgraduate Research Conference 2015 University of Kelaniya, Kelaniya, Sri Lanka, (Abstract), 339 pp. en_US
dc.identifier.uri http://repository.kln.ac.lk/handle/123456789/11272
dc.description.abstract Cadmium sulfide has been identified as the most promising window material for fabrication of CdS/CdTe and CdS/CuInGaSe2 thin film solar cells. Among vast variety of commercially available CdS fabrication methods electrodeposition (ED) is a viable technique due to its low cost and simplicity. This study focuses a procedure followed for optimization of the three growth parameters; pH of the bath solution, deposition temperature and deposition voltage for ED-CdS thin films with high photovoltaic activities utilizing CdCl2 and Na2S2O3 as cadmium and sulfur precursors respectively. Based on the two initial leading experiments, feasible pH and deposition temperature ranges for a stable electrolyte which does not promote chemical bath formation of CdS were identified to be in the ranges of 1.5-2.0 and 50-70 °C respectively. Also, using cyclic voltammetry the feasible cathodic deposition voltage was identified to be in the range of 640- 720 mV with respect to saturated calomel electrode. Consequently, the technique of the design of experiment (DOE) was carried out to establish random combinations of levels of the three electrodeposition parameters amid the previously identified parameter ranges for deposition of CdS layers via the ED technique. Finally, the electrical, optical, structural and morphological properties of the CdS thin films electrodeposited under different combinations of parameter values were investigated using photo-electrochemical cell study, optical absorption spectroscopy, x-ray diffraction method and scanning electron microscopy respectively. The results indicated that, aqueous solutions in the pH range of 1.6 to 1.8 containing 0.10 M CdCl2 and 0.01 M Na2S2O3 at 55-65 °C can successfully be used for electrodeposition of thin film CdS semiconductor materials over a cathodic deposition voltage range of 650 to 680 mV with a deposition period of 20 to 40 min. en_US
dc.language.iso en en_US
dc.publisher Faculty of Graduate Studies, University of Kelaniya en_US
dc.subject Electrodeposition en_US
dc.subject Cadmium Sulfide en_US
dc.subject Semiconductors en_US
dc.subject Solar energy materials en_US
dc.title Optimization of three growth parameters for electrodeposition of CdS thin film semiconductor; pH, deposition temperature and deposition voltage in a stable electrolyte en_US
dc.type Article en_US


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