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Electrodeposition of well-adhered CdTe thin films for solar cell applications

Atapattu, H.Y.R.; de Silva, D.S.M.; Pathiratne, K.A.S. (Faculty of Science, University of Kelaniya, Sri Lanka, 2016)
Effect of temperature on photosensitivity of electrodeposited n-Cu2O/p-CuxS thin film junctions

Madusanka, H.D.P.; Kalubowila, K.D.R.N.; Jayathilaka, K.M.D.C.; Jayanetti, J.K.D.S. (Faculty of Science, University of Kelaniya, Sri Lanka, 2016)
Electrodeposited Cu2O homojunction solar cells: Fabrication of a cell of high short circuit photocurrent

Wijesundera, R.P.; Gunawardhana, L.K.A.D.D.S.; Siripala, W. (Elsevier, 2016)
Sulphurisation of sequentially electrodeposited Cu-In alloy for the preparation of semiconductor thin films

Wijesundera, R.P.; Siripala, W.; Jayasuriya, K.D.; Kalingamudali, S.R.D. (2000)
Is it possible to grow stable p-type CdS layers suitable for fabrication of electronic devices?

Kiriarachchi, H.D.; Lamahewage, L.H.S.N.S.; Wickramasinghe, W.A.S.; de Silva, D.S.M.; Pathiratne, K.A.S.; Dharmadasa, I.M. (University of Malaya, Malaysia, 2013)
Improvement of p-Cu2O/Au interface by controlling the pH of the electrodeposition bath of Cu2O

Kafi, F.S.B.; Jayathilekea, K.M.D.C.; Wijesundera, R.P.; Siripala, W. (Faculty of Science, University of Kelaniya, Sri Lanka, 2016)
Spectral responses of electrodeposited cuprous oxide thin film electrodes

Siripala W (Journal of the National Science Council of Sri Lanka, 1995)
Electrodeposition of CdTe thin films using a two electrode system

Wedisinghe, K.C.; Atapattu, H.Y.R.; de Silva, D.S.M. (Faculty of Science, University of Kelaniya, Sri Lanka, 2016)
Growth of CuZnS thin films by sequential electrodeposition and sulphurisation

Fernando, W.T.R.S.; Jayathilekea, K.M.D.C.; Wijesundera, R.P.; Siripala, W. (Faculty of Science, University of Kelaniya, Sri Lanka, 2016)
Post deposition surface treatments to enhance the quality of polycrystalline CdTe thin films for photovoltaic applications

Atapattu, H.Y.R.; De Silva, D.S.M.; Pathirane, K.A.S. (Nit teria1s Chemi stry and Physics 213 (201S) 4065113, 2018)

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