Science

Permanent URI for this communityhttp://repository.kln.ac.lk/handle/123456789/1

Browse

Subject: search.filters.subject.Copper Indium Sulphide

Search Results

Now showing 1 - 2 of 2
  • No Thumbnail Available
    Item
    IV characteristics of ITO/Cu2O/ metal junctions
    (1996) Perera, L.D.R.D.; Siripala, W.; Kalingamudali, S.R.D.; Jayanetti, J.K.D.S.; de Silva, K.T.L.
    Cuprous oxide is an inexpensive and non-toxic semiconductor material having the potential for use in low-cost photovoltaic devices. Electrodeposition is a low-cost method t0 produce thin Cu2O films and electrodeposited CU2O has been reported to be n-type, In order to investigate the possibility of using electrodeposited Cu2O in solar cells, Cu2O/metal junctions were studied using their I-V characteristics. Thin films of Cu20 were electrodeposited on Indium tin oxide (ITO) coated glass substrate using an aqueous solution of cupric acetate. Electrodeposition was carried out under potentiostatic condition of -250 mV vs SCE at 55"C for a period of 1 h. These Cu20 samples were used to make junctions with Al, Hg,Cu, Ag and Au. The I-V plots of these junctions were obtained in dark and when illuminated. The I-V characteristics of the Cu2O/Hg junction show good rectifying properties.The plots for the junction in dark and under illumination indicate that the electrodeposited Cu2O behaves as an n-type semiconductor. The I-V profile fits into the standard diode equation with I0 = 2.8 x 10 -10 A, ideality factor n=0.48 and series resistance Rs = 40U. Also, the Junction exhibits a contact potential of about 150 mV.
  • Thumbnail Image
    Item
    Photoelectrochemical Characterisation of ZnSe coated Copper Indium Sulphide Thin Film Electrodes
    (1999) Wijesundera, R.P.; Siripala, W.; Jayasuriya, K.D.; Kalingamudali, S.R.D.; de Silva, K.T.L.; Jayanetti, J.K.D.S.
    Capper Indium Sulphide thin films were prepared by sulphidation of Cu-In alloy on Ti substrate. Cu-In alloy was potentiostatically electrodeposited at ~1.4 V Vs SCE in an aqueous bath containing 5 mM CuCl2) 37.5m1 InCl3,1% (V/V) TEM and .75% (V/V) ammonia. Sulphidation was carried out in saturated H2S gas at 550�C for 30 min. XRD measurement reveals that the crystal structure of the films is CuInl1S17. ZnSe was deposited on CuInS electrode by electrodeposition in an aqueous bath of 0.1 M ZnS04 and 10 -5 M Se02 at -0.5 V Vs SCE for 90 min. XRD measurement reveals that the ZnSe films are amorphous. Ti/CulnS/ ZnSe thin film system in a PEC cell containing KI produces n-type photocondutivity. Dark and illuminated I-V measurement shows the existence of a main junction. However, some departure is also evident suggesting the possibility of existence of another junction. Spectral response of the Ti/CuInS/ZnSe system in a PEC cell shows the photoresponse of born n-CuInS/p-ZnSe and p-ZnSe/electrolyte interfaces. Normally, for shorter wavelength the spectral response is p-type while for the long wavelength it is n-type. The preliminary results of the study suggest the possibility of utilising electrodeposited n-CuInS in combination with electrodeposited p-ZnSe in developing a low-cost thin film solar cell.