Chemistry
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Item ZnS Assisted ZN Doping in CdZnS Electrodeposition(Journal of Science 2019, Department of Chemistry, University of Kelaniya, Sri Lanka, 2019) Sarathchandra, K. A. D. M. S.; De Silva, D. S. M.; Pathiratne, K. A. S.Many reports have been published elsewhere on making thin films of cadmium zinc sulphide (CdZnS) using different techniques. This article summarizes a method developed to form CdZnS by incorporating electrodeposited Cd and S atoms simultaneously to the chemically formed ZnS material in the electrolytic bath at the conducting surface of fluorine doped tin oxide (FTO) coated glass substrate. Moreover, the mechanism of formation of CdZnS is proposed as a solid state reaction between electrodeposited Cd and S atoms on the glass/FTO substrate with adsorbed ZnS particles from the electrolytic bath. The precursors used for Cd, S and ZnS in the electrolyte were aqueous solutions of CdCl2, ZnCl2 and Na2S2O3. Two different methods were tested to form ZnS within the electrolyte bath where one forming ZnS in the bath at the beginning of electrodeposition of Cd and S and in the other one, ZnS is formed before the electrodeposition of Cd and S. The results of the band gap measurements show an undulation which is closer to the band gap energy of CdS indicating probable codeposition of one or more materials such as CdS, (2.42 eV), ZnS (3.7 eV), CdO (2.2 eV), and ZnO (3.2 eV) along with CdZnS. The Tauc plot resulted by the material produced in method 1 has shown an undulation at the onset of Tauc plot which is near the band gap energy of CdS indicating the codeposition of CdS with CdZnS, but the Tauc plot of CdZnS electrodeposited from method 2 has shown clear separation in band gaps from 2.44 – 2.52 eV, when the annealing temperature, the Zn2+ ion concentration in bath and the electrodeposition pH were varied. These thin films were also characterized by photoelectrochemical (PEC) cell analysis, x-ray diffraction (XRD), energy dispersive x-ray analysis (EDXA) and scanning electron microscopy (SEM) techniques.Item Electrodeposition and characterization of as-deposited and annealed CdTe thin films.(Ceylon Journal of Science, 45(2), 53–59. DOI: http://doi.org/10.4038/cjs.v45i2.7388, 2016) Kumarasinghe, K. D. M. S. P. K.; De Silva, D. S. M.; Pathiratne, K. A. S.; Salim, H. I.; Abdul-Manaf, N. A.; Dharmadasa, I. M.Thin films of CdTe semiconductor materials were grown on fluorine doped tin oxide (FTO) conducting glass substrates using the technique of electrodeposition. CdSO4 at high concentrations and CdCl2, TeO2 at low concentrations were used as precursor salts for electrodeposition. The range of deposition potentials was estimated using cyclic voltammetric measurements. The electrical, optical, structural and morphological characteristics of as-deposited and annealed CdTe thin films were characterized using photo-electrochemical (PEC) cell studies, UV-Vis spectrophotometry, X-ray diffraction (XRD) and scanning electron microscopy (SEM). These particular samples were converted from n-type into p-type after heat treatment. UV-Vis spectrometric measurements for CdTe layers indicated that, the energy band gaps of 1.45±0.02 eV for both as-deposited and annealed samples which exhibited the required optical property for fabricating CdS/CdTe solar cells. Little increase in (220) and (311) peaks of XRD spectra were observed for annealed layers compared to the as-deposited material. However, annealing exhibited a small reduction of cubic phase preferential orientation (111). The optical transmission for both as-deposited and annealed CdTe samples were about 60% for wavelengths longer than about 850 nm.