Physics
Permanent URI for this collectionhttp://repository.kln.ac.lk/handle/123456789/3750
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Item ITO/n-Cu2O/p-CuxS Thin Film Solar Cell(Sri Lanka Association for the Advancement of Science, 1997) Perera, L.D.R.D.; Wijesundera, R.P.; Siripala, W.; Jayasuriya, K.D.; de Silva, K.T.L.; Jayanetti, J.K.D.S.Item Study of Sulphidation of Electrodeposited Cu2O Thin Films for Solar Cell Applications(1998) Siripala, W.; Wijesundera, R.P.; Perera, L.D.R.D.; Jayasuriya, K.D.Cuprous oxide (Cu20 ) layers were potentiostatically electrodeposited on glass/ITO substrates and then they were partially sulphided using Na2S and H2S. Resulting layers were used to fabricate ITO/n-Cu20/p-CuxS thin film solar cells. Spectral response measurements showed that the cell structure exhibits both n- and p-type behavior. Sulphidation of Cu20 does not produce CuxS thick layers adequate for efficient heterojunction solar cell, but improved the photovoltaic activity. The best device fabricated shows V? = 240 mV and Isc= 1.6mA/cm2 under AM 1 artificial illumination.Item Fabrication of CUO!CU2O Heterojunction and Its Local Structural Characterization(2011) Siripala, W.; Wijesundera, R.P.; Perera, L.D.R.D.; Jayasuriya, K.D.Cuprous oxide (Cu20) thin films on Ti substrate were potentiostatically electrodeposited at -200 mV in an acetate bath. For the growth of p-type cupric oxide (CuO) thin films , CU20 thin film s were annealed at 500 oC (for 30 min in air. In order to fabricate CuO/Cu20 hetorojunction, thin film of Cu20 was potentiostatically electrodeposited on Ti/CuO electrode . Deposits were characterized by using X-ray diffraction (XRD) and scanning electron micrographs (SEM). Results revealed that well covered n-tvpe polycrystall ine Cu20 thin film can be electrodeposied on Ti/CuO electrode at -550 mV VS the SCE in an acetate bath. The CuO/Cu20 heterojunction gave the open circuit voltage (Voc)of 210 mV and short circuit current (Jsc) of 310 uA/cm2. Layer by layer structural properties of the electrodeposited Ti/CuO/Cu20 thin film heterojunction have been studied by means of the XRD and the X-ray absorption spectra (XAS) with different grazing angles of the incident Xray beam. Results reveal that Cu20 and CuO are high quality semiconducting thin films but amorphous structure is formed between CuO and Cu20 while Cu20 deposition on CuO. It can be expected that amorphous structure formed in the middle of the CuO/Cu20 heterojunction attributes better lattice matching between CuO and Cu20 interface .Item Sulphidation of electrodeposited cuprous oxide thin films for photovoltaic applications(Solar Energy Materials and Solar Cells, 2000) Wijesundera, R.P.; Perera, L.D.R.D.; Jayasuriya, K.D.; Siripala, W.; de Silva, K.T.L.; Samantilleke, A.P.; Dharmadasa, I.M.Electrodeposited cuprous oxide thin films on indium-doped tin oxide (ITO) substrates were sulphided by exposing them to a spray of aqueous solution of sodium sulphide or to a mixture of hydrogen sulphide and nitrogen gases. Both methods produced light darker and darker films having different photovoltaic characteristics in a solar cell structure. The photovoltages produced by the light darker films under AM 1.5 illumination was negative as compared to the positive photovoltages produced by the darker films. Spectral response measurements revealed that most of the light darker films produced positive photovoltages in the shorter wavelengths and negative photovoltages in the longer wavelengths. However, some of the light darker films produced only the negative photovoltage for the entire spectral range and their photovoltaic properties were comparatively better. Darker films resulted in only the positive photovoltages in the entire spectral range. As a result of the sulphidation, the bulk crystal structure of the cuprous oxide thin films was not changed, however, the interfacial characteristics of the solar cell structure were modified.