Physics

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    Growth of (Cu2O)1-x (Cu2O)x thin films for PV applications
    (Sri Lanka Association for the Advancement of Science, 2013) Kalubowila, K.D.R.N.; Wijesundera, R.P.; Siripala, W.
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    Electrodeposited CuO/Cu2O heterojunction for PV applications
    (Institute of Physics, Sri Lanka, 2015) Kalubowila, K.D.R.N.; Wijesundera, R.P.; Siripala, W.
    Anodic electrodeposition was carried out to grow CuO thin films on Ti substrate at a deposition potential of 700 mV vs. SCE in an aqueous solution containing 0.4 M CuSO4 and 3.0 M lactic acid. CuO thin films were annealed at 375 o C for 15 min in air to improve the surface quality prior to the growth of Cu2O films, in order to fabricate the heterojunction. After growth of n-Cu2O, zero bias spectral response and dark and light I-V characteristics in PEC were employed to investigate n-Cu2O growth conditions on p-CuO thin films. CuO/Cu2O heterojunction solar cells were fabricated by electrodeposition of n-Cu2O thin film on Ti/CuO electrode at -200 mV vs. SCE for 60 min in an acetate bath. Ti/CuO/Cu2O/Au solar cell structure was characterized using zero bias spectral response and dark and light I-V characteristics and the cell produced VOC of 290 mV and ISC of 2.63 mA/cm2.
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    Electrodeposited (Cu2O)1-x (CuO)x/Cu2O heterojunction solar cell
    (Technical Ses., Institute of Sri Lanka, 2014) Kalubowila, K.D.R.N.; Wijesundera, R.P.; Siripala, W.
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    Construction of Cu2O Thin Film based Light Detector
    (Proc. 28th Technical Sess. of Institute of Physics, Sri Lanka, 2012) Kalubowila, K.D.R.N.; Jayathilaka, K.M.D.S.; Siripala, W.; Jayanetti, J.K.D.S.
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    Methods for improving n-type photoconductivity Cu2O thin films
    (Semiconductor Science and Technology, 2014) Kalubowila, K.D.R.N.; Gunawardena, L.K.A.D.D.S.; Wijesundera, R.P.; Siripala, W.
    Electrodeposition technique is very useful for depositing n-type Cu2O thin films on various substrates. However, most of the reported n-type Cu2O thin film electrodes exhibit not only n-type photoactivity but also p-type photoactivity in photoelectrochemical cells. In this study, current?voltage characteristics and zero bias spectral response measurements were employed to investigate the possibilities to remove/minimize this unwanted p-type behaviour of n-type Cu2O thin films electrodeposited on Ti substrate. For this, prior deposition of Cu thin films on Ti substrate, low temperature annealing of Cu2O films in air and optimization of deposition bath pH were investigated. Growth of a very thin Cu film improved the n-type photosignal significantly and reduced the p-type photoresponse of the films. Films electrodeposited using an acetate bath of pH 6.1 produced only the n-type photoresponse. Low temperature annealing of Cu2O films in air improved the n-type photoresponse and it was found that annealing at 100 �C for 24 h produces the best result. These methods will be very useful to obtain electrodeposited Cu2O thin film with improved n-type photoactivity suitable for applications in thin film solar cells and other devices.
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    Methods for improving n-type photoconductivity of electrodeposited Cu2O thin films
    (Semiconductor Science and Technology, 2014) Kalubowila, K.D.R.N.; Gunawardena, L.K.A.D.D.S.; Wijesundera, R.P.; Siripala, W.
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    Growth of(Cu2O)1-x(CuO)x thin films for PV applivations
    (Srilanka association for the advancement od science proceedings of 69th Anuual Session., 2013) Kalubowila, K.D.R.N.; Wijesundera, R.P.; Siripala, W.