Browsing by Author "Jayathileka, K.M.D.C."
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Item Electrodeposited chlorine doped cuprous oxide thin films for gas sensing applications(Sri Lanka Association for the Advancement of Science, 2013) Bandara, K.N.D.; Jayathileka, K.M.D.C.; Dissanayake, D.P.; Siripala, W.; Jayanetti, J.K.D.S.Item Electrodeposited nano-crystalline cuprous oxide thin films for gas sensing applications(Sri Lanka Association for the Advancement of Science, 2012) Bandara, K.N.D.; Jayathileka, K.M.D.C.; Siripala, W.; Dissanayake, D.P.; Jayanetti, J.K.D.S.Item Enhancement of the photovoltaic conversion efficiency of electrodeposited p-n homojunction cuprous oxide solar cells by surface passivation(Sri Lanka Association for the Advancement of Science, 2013) Jayathileka, K.M.D.C.; Kapaklis, V.; Siripala, W.; Jayanetti, J.K.D.S.Item Fabrication and characterization of electrodeposited CuO/Cu2O heterojunction solar cells(Sri Lanka Association for the Advancement of Science, 2013) Jayathileka, K.M.D.C.; Kapaklis, V.; Siripala, W.; Jayanetti, J.K.D.S.Item Fabrication of CZTS/Cu2O Solar Cell.(19th Conference on Postgraduate Research, International Postgraduate Research Conference 2018, Faculty of Graduate Studies,University of Kelaniya, Sri Lanka, 2018) Fernando, W.T.R.S.; Jayathileka, K.M.D.C.; Siripala, W.; Wijesundera, R.P.Cu2ZnSnS4 (CZTS) and Cu2O are two promising materials for application in low-cost and environmentally-friendly thin film solar cells due to their optoelectronic properties. Among the various growth techniques available for CZTS and Cu2O, electrodeposition is an attractive technique because of its simplicity, low-cost and easy to control the properties of the deposits. In order to grow CZTS on Mo substrate, Cu thin film was electrodeposited on Mo substrate at –0.89 V vs Ag/AgCl reference electrode (RE) in an electrochemical cell containing 0.4 M CuSO4, 3 M lactic acid and NaOH at pH of 11. Deposition of Sn thin film on Mo/Cu electrodes was carried out at -1.2 V vs Ag/AgCl RE in an electrochemical cell containing 0.055 M SnCl2, 2.25 M NaOH and 8 ml of sorbitol. Zn thin film was electrodeposited on Mo/Cu/Sn at -1.2 V vs Ag/AgCl RE in an electrochemical cell containing 0.2 M ZnSO4. In order to form CZTS material on Mo substrate, Mo/Cu/Sn/Zn thin film electrodes were annealed at 55 °C for 60 min in H2S. In order to fabricate CZTS/Cu2O heterojunction, n-Cu2O thin film was potentiastatically electrodeposited on Mo/CZTS at -0.52 V vs Ag/AgCl RE in electrochemical cell containing 0.45 M CuSO4, 3.0 M lactic acid and 4.0 M NaOH. pH of the bath was adjusted to 9.3 by adding NaOH and the temperature of the bath was maintained at 60 °C. In order to make front contact to the device, thin Au spots (2×2 mm2) were deposited on Cu2O by using the sputtering technique. Materials and device were characterised using XRD, SEM, spectral response, C-V and I-V measurements. In this preliminary study, device exhibited open circuit voltage (VOC) of 200 mV and short circuit current density (JSC) of 0.75 mA cm-2. This result is encouraging since CZTS/Cu2O heterojunction haven’t been reported in the literature. It is planning to improve photoactivity of the device by employing pre and post treatments (annealing and surface treatments).Item Fermi‐level pinning and effect of deposition bath pH on the flat‐band potential of electrodeposited n‐Cu2O in an aqueous electrolyte(Wiley Online Library, 2016) Kafi, F.S.B.; Jayathileka, K.M.D.C.; Wijesundera, R.P.; Siripala, W.Capacitance–voltage (C–V) and modulated light-induced current–voltage measurements were employed to investigate the Cu2O/electrolyte junction of electrodeposited n-Cu2O thin films. The Mott–Schottky plots resulting from the C–V measurements revealed that the extrapolated flat-band potential of n-Cu2O films was strongly influenced by the pH of the bath where the films were grown. The flat-band potential change was 300 mV for a pH difference of 0.8 and showed that the surface chemistry at an n-Cu2O/aqueous electrolyte interface was strongly affected by the pH of the film deposition bath. In addition, current–potential measurements revealed that at the measured flat-band potential the photocurrent did not vanish for n-Cu2O films and the Fermi level at the interface was pinned due to the presence of electrically active surface states. Information on the presence of electrically active surface states and the shift in flat-band potential will be very useful for applications of n-Cu2O films in various devices.Item Photocurrent enhancement of electrodeposited Cl doped cuprous oxide thin films on Ti substrates by annealing(Sri Lanka Association for the Advancement of Science, 2012) Jayathileka, K.M.D.C.; Kapaklis, V.; Siripala, W.; Jayanetti, J.K.D.S.