Browsing by Author "Chithrani, B.D."

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    Electrodeposition and Characterisation of CuInSe2 for applications in thin film solar cells
    (Thin Solid Films, 2001) de Silva, K.T.L.; Priyantha, W.A.A.; Jayanetti, J.K.D.S.; Chithrani, B.D.; Siripala, W.; Blake, K.; Dharmadasa, I.M.
    Copper indium diselenide (CuInSe2) layers have been grown at room temperature by electrochemical deposition technique in an aqueous medium. Resulting thin films have been characterised using XRD, XRF, XPS, GDOES and SEM for structural, stoichiometric and morphological properties. A considerable influence of the deposition potential on the atomic composition of In and Se present in the film was observed. Cu composition remains the same within the deposition potentials used in this investigation. The deposited layers are polycrystalline and annealing at 350�C for 30 min improves the crystallinity. The film quality deteriorates due to dissociation when annealed at temperatures above 350�C. Excessive annealing results in a surface which is depleted in Cu and rich in In and Se.
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    Growth and Characterization of Copper Indium Diselenide
    (Proceedings of the Technical Session of Institute of Physics, Sri Lanka, 1996) Chithrani, B.D.; de Silva, K.T.L.; Jayanetti, J.K.D.S.; Siripala, W.
    CuInSe2 thin films were prepared on Ti plates by electrodeposition from an aqueous solution containing CuCl2, InCl3 and SeO2. The deposition was carried out at -0.5V Vs SCE. X-ray diffraction and Scanning electron microscopy have been used to study the crystallographic and morphological properties of the samples. Effects of annealing in air have also been monitored. Apparent bulk structure changes have been observed during annealing. Annealing of films at 350 0C was found to result in the formation of CuInSe2 films having a chalcopyrite structure, indicating that the samples are of good quality.