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Study of Annealing Effects of Cuprous Oxide Grown by Electrodepostion Technique

Show simple item record Siripala, W. en_US Perera, L.D.R.D. en_US de Silva, K.T.L. en_US Jayanetti, J.K.D.S. en_US Dharmadasa, I.M. en_US 2014-11-19T04:46:48Z 2014-11-19T04:46:48Z 1996
dc.identifier.issn 0927-0248 en_US
dc.description.abstract Low temperature electrochemical deposition of cuprous oxide from aqueous solutions has been investigated. X-ray diffraction, scanning electron microscopy, optical absorption, and photo-response of liquid/cuprous oxide junctions have been used to study the deposits' crystallographic, morphological, optical, and electrical properties. Effects of annealing in air have been studied using the above mentioned methods. As-deposited cuprous oxide exhibits a direct band gap of 2.0 eV, and shows an n-type behaviour when used in an liquid/solid junction. Annealing below 300�C enhances the n-type photocurrent produced by the junction. Type conversion occurs after heat treatments in air at temperatures above 300�C. No apparent bulk structure changes have been observed during annealing below this temperature, but heat treatments above this temperature produce darker films containing cupric oxide and its complexes with water. en_US
dc.publisher Solar Energy Materials and Solar Cells en_US
dc.subject Copper en_US
dc.subject Oxide; Electrocution en_US
dc.subject Sri Lanka; Electroforming; Electroplating; Technique; Annealing of metals en_US
dc.title Study of Annealing Effects of Cuprous Oxide Grown by Electrodepostion Technique
dc.type article en_US
dc.identifier.department Physics en_US

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