Potentiostatic electrodeposition of cuprous oxide thin films

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dc.contributor.authorPerera, L.D.R.D.en_US
dc.contributor.authorSiripala, W.en_US
dc.contributor.authorde Silva, K.T.L.en_US
dc.date.accessioned2014-11-19T04:45:52Z
dc.date.available2014-11-19T04:45:52Z
dc.date.issued1996
dc.description.abstractCurrent-potential scans were used to investigate the electrodeposition of coprous oxide thin films in an acetate bath. We found that a narrow potential domain, from OV vs SCE, is available for the potentiostatic electrodeposition of cuprous oxide thin films and extension of this domain towards more cathodic potentials will result in the co-deposition of copper. These results were further verified by the x-ray diffraction measurements on the thin films formed by the electrodeposition at various electrode potensials. Optical transmission studies revealed that electrodeposited cuprous oxide is a direct band gap semiconductor of 2.0 eV.en_US
dc.identifier.departmentPhysicsen_US
dc.identifier.urihttp://repository.kln.ac.lk/handle/123456789/4089
dc.publisherJournal of the National Science Council of Sri Lankaen_US
dc.subjectCuprous oxideen_US
dc.subjectelectrodepositionen_US
dc.subjectthin filmsen_US
dc.titlePotentiostatic electrodeposition of cuprous oxide thin films
dc.typearticleen_US

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