Fabrication and Characterisation of CuinS2/ZnSe/Metal Structures for Solar Cell Applications

Abstract

Thin film solar cell structure of Ti/CuInS2/ZnSe/Metal was fabricated using simple electrochemical and sulphurisation techniques. Copper lndium Disulphide (CuInS2 thin films were prepared by sulphurisation of Cu-In alloy on Ti substrates. Films were characterised usrng X-ray diffraction (XRD)1 scanning electron microscopy (SEM), spectral response and t-V measurements. XRD measurements snowed the characteristic peaks of CulnSz and SEM showed that the crystallites are of the size 1-3 J.1m. ZnSe thin fitms were deposited on Ti/CuInS2 using electrodeposition technique, TiCuInS2/ZnSe/Metal structures were characterised using C-V, I-V and spectral response measurements. Light and dark I-V measurements revealed the phctovoltaic activity of the structure while the C-V measurements confirmed the formatlon of the heterojunction. Spectral response showed that the photocarriers are generated by the absorption of light in the CuJnS2 tayer.