Characterization of CuInS2 thin films prepared by electrodeposition and sulfurization with photoluminescence spectroscopy

dc.contributor.authorGaruthara, R.en_US
dc.contributor.authorWijesundera, R.P.en_US
dc.contributor.authorSiripala, W.en_US
dc.date.accessioned2014-11-19T04:45:17Z
dc.date.available2014-11-19T04:45:17Z
dc.date.issued2003
dc.description.abstractPotentiostatic electrodeposition and sulfurization techniques were used to prepare polycrystalline CuInS2 thin films. X-ray diffraction and photoresponse measurements in a photoelectrochemical cell (PEC) revealed that photoactive polycrystalline CuInS2 films can be deposited on Ti substrate. Photoluminescence (PL) spectroscopy was used to investigate the prepared thin films and optically characterize them. PL spectra revealed the defect structure of the samples with an acceptor energy level at 109 meV above the valance band and a donor energy level at 71 meV below the conduction band. The CuInS2 thin films prepared in this investigation are observed to be In-rich material with n-type electrical conductivity.en_US
dc.identifier.departmentPhysicsen_US
dc.identifier.issn0927-0248en_US
dc.identifier.urihttp://repository.kln.ac.lk/handle/123456789/4046
dc.publisherSolar Energy Materials and Solar Cellsen_US
dc.subjectPhotoluminescence; Polycrystalline CuInS2en_US
dc.titleCharacterization of CuInS2 thin films prepared by electrodeposition and sulfurization with photoluminescence spectroscopy
dc.typeArticleen_US

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