Kalingamudali, S.R.D.; Wismayer, A.C.; Woods, R.C.; Roberts, J.S.
(Applied Physics Letters, 1994)
Reduction of the surface recombination current components in Npn AlGaAs/GaAs heterojunction bipolar transistors has been achieved by overgrowing the emitter?mesas with an AlGaAs layer approximately 0.5 ?m thick. It was ...