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Item Cu2O Homojunction Solar Cells: Efficiency Enhancement with a High Short Circuit Current(2024) Thejasiri, S. A. A. B.; Jayathilaka, K. M. D. C.; Kafi, F. S. B.; Kumara, L. S. R.; Seo, O.; Yasuno, S.; Sakata, O.; Siripala, W.; Wijesundera, R. P.Cu2O homojunction solar cells were fabricated using potentiostatic electrodeposition technique. n-Cu2O thin films were grown in an acetate bath while p-Cu2O thin films were grown in a lactate bath. In the growth of n-Cu2O films, cupric acetate concentration, pH and temperature of the bath, deposition potential and duration (film thickness) and annealing temperature were investigated. In the growth of p-Cu2O on n-Cu2O, concentration of copper sulphate and lactic acid solutions, pH and temperature of the bath, deposition potential and duration were investigated. In addition, the procedure of sulfidation of p-Cu2O film surface using (NH4)2S vapor, before depositing Au front contact, was also optimized to enhance the photoactive performance. The structural, morphological and optoelectronic properties of the Cu2O films were investigated using scanning electron microscopy (SEMs), high energy X-ray diffraction (HEXRD), hard X-ray photoelectron spectroscopy (HAXPES), spectral response and current–voltage (J-V) measurements. The best Cu2O homojunction solar cell exhibited Voc = 460 mV, Jsc = 12.99 mA·cm−2, FF = 42% and η = 2.51%, under AM 1.5 illumination. Efficiency enhancement with the record high Jsc value for the Cu2O homojunction solar cell has mainly been due to the optimization of pH of the n-Cu2O deposition bath and lactic acid concentration of the p-Cu2O deposition bath.Item Fabrication of inverted organic solar cells on stainless steel substrate with electrodeposited and spin coated ZnO buffer layers(Journal of Polymer Engineering, 2022) Namawardana, D. G. K. K.; Wanigasekara, R. M. G.; Wanninayake, W. T. M. A. P. K.; Jayathilaka, K. M. D. C.; Wijesundera, R. P.; Siripala, W.; Malik, M. I.Polymer based organic solar cells (OSCs) are of tremendous interest as suitable candidates for producing clean and renewable energy in recent years. In this study, inverted OSCs on stainless steel (SS) substrate with zinc oxide (ZnO) as the electron selective transport layer (ESTL), are investigated, occupying bulk heterojunction blend of regioregular poly(3-hexylthiophene) (P3HT) and phenyl- C61-butyric acid methyl ester (PCBM) as the active material and poly-(4,3-ethylene dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as the hole transport layer (HTL). The device structure is SS/ZnO/P3HT:PCBM/PEDOT:PSS/Au. ZnO films are prepared by spin coating and electrodeposition techniques, followed by annealing under ambient conditions. The insertion of ZnO layer between the SS substrate and active layer has improved short-circuit current ( Jsc), open-circuit voltage (Voc), fill factor (FF), and power conversion efficiency (PCE) compared to those of the reference cell without ZnO layer, achieving the highest efficiency of 0.66% for the device with spin coated ZnO from sol–gel technique. This enhancement can be attributed to the effective electron extraction and the increased crystallinity of ZnO after annealing treatments at higher temperatures as further confirmed by X-ray diffraction (XRD) and scanning electron microscope (SEM) analyses.Item Effect of pre-surface treatments on p-Cu2O/Au Schottky junctions(Journal of the National Science Foundation of Sri Lanka,, 2021) Kafi, F.S.B.; Jayathilaka, K.M.D.C.; Wijesundera, R.P.; Siripala, W.Cuprous oxide (Cu2O) is a suitable semiconducting material in fabrication for low-cost, eco-friendly semiconductor junction devices. Besides the parameterization of the growth conditions of Cu2O, formation of metal contacts impact the overall performance of these type of devices. The existence of unavoidable dangling bonds and/or dislocated surface atoms could lead to form imperfect contacts with metals, for example in Cu2O/Au junction devices. Nevertheless, modification of the Cu2O thin film surfaces prior to make contacts with Au has shown the capability to alter the junction properties. Here we report that, the application of surface treatments; annealing and/or sulphidation on specifically the electrodeposited p-Cu2O thin film surfaces, where p-Cu2O thin films were grown in low cupric ion concentrated acetate bath, has influenced the interfacial properties of particular p-Cu2O/Au Schottky junctions compared to the untreated p-Cu2O/Au Schottky junction. This has been well-established by the results of SEM and C-V characterizations of p-Cu2O/Au Schottky junctions. The subsequent annealing and sulphidation of p-Cu2O thin film surfaces have lowered the built-in potential value by 121 mV compared to the untreated Schottky junction. This result reveals the possibility of employing surface treatments on electrodeposited Cu2O thin films in fabrication of high efficient Cu2O based junction devices.Item A Comparative Study: Sequential and Single-Step-Electrodeposited CZTS Thin Films(Physica Status Solidi, 2022) Fernando, W. T. R. S.; Jayathilaka, K. M. D. C.; Wijesundera, R. P.; Siripala, W.CZTS (Cu2ZnSnS4) is a relatively new and promising semiconductor material suitable for photovoltaic applications due to its favorable optoelectronic properties. Of the many techniques available for growing these films, a comparative study on sequential and single-step electrodeposition methods to grow CZTS films is carried out in this investigation to explore the possibility of improving the quality of the films using the inexpensive electrodeposition technique. Mainly in both methods, potentiostatic electrodeposition technique is adopted for growing CZTS thin films. In both methods, growth conditions of the CZTS films are optimized after measuring the photoresponses in a photoelectrochemical (PEC) cell of the films that resulted at the end of each deposition step. The observed structural and optoelectronic properties of the films reveal that, in general, structurally good and photoactive CZTS films can be prepared using both methods. Moreover, photoresponse and Mott–Schottky measurements on CZTS films in a PEC reveal that CZTS films prepared using the single-step electrodeposition have better photoactive properties and improved doping densities. This important finding shows that when developing CZTS-based solar cells using the inexpensive electrodeposition technique, single-step electrodeposition is more advantageous.Item Fabrication Of Cuprous Oxide Homojunction Solar Cell By Varying The Lactic Acid Ion Concentration Of Thin Film p-Cu2O Deposition Bath.(ECS Transactions, 2022) Thejasiri, A.; Kafi, F. S. B.; Wijesundera, R.; Siripala, W.In this stud y, we have investigated the possibility of improving the Voe, FF and 1J values of Cu20 solar cells while preserving the resulted high Jsc values. Here we report that controlling the growth of p-Cu20 by varying the lactic acid ion concentration of thin film p-Cu20 deposition bath has improved the performance of Cu20 homo junction solar cell while preserving high J sc value. The fabricated surface treated thin film p-n homojunction solar cell has resulted Jsc = 12.95 mA cm-2, Voe = 445 mV, FF = 39.5% and 1J = 2.28%. The efficiency reported here is very significant in respect of Cu20 homojunction solar cells because it clearly demonstrates the possibility of adapting the low cost Cu20 material and fabrication methods in achieving a commercially viable solar cell.Item Effect of pre-surface treatments on p-Cu2O/Au Schottky junctions(Journal of the National Science Foundation of Sri Lanka, 2021) Kafi, F.S.B.; Jayathilaka, K.M.D.C.; Wijesundera, R.P.; Siripala, W.Cuprous oxide (Cu2O) is a suitable semiconducting material in fabrication for low-cost, eco-friendly semiconductor junction devices. Besides the parameterization of the growth conditions of Cu2O, formation of metal contacts impact the overall performance of these type of devices. The existence of unavoidable dangling bonds and/or dislocated surface atoms could lead to form imperfect contacts with metals, for example in Cu2O/Au junction devices. Nevertheless, modification of the Cu2O thin film surfaces prior to make contacts with Au has shown the capability to alter the junction properties. Here we report that, the application of surface treatments; annealing and/or sulphidation on specifically the electrodeposited p-Cu2O thin film surfaces, where p-Cu2O thin films were grown in low cupric ion concentrated acetate bath, has influenced the interfacial properties of particular p-Cu2O/Au Schottky junctions compared to the untreated p-Cu2O/Au Schottky junction. This has been well-established by the results of SEM and C-V characterizations of p-Cu2O/Au Schottky junctions. The subsequent annealing and sulphidation of p-Cu2O thin film surfaces have lowered the built-in potential value by 121 mV compared to the untreated Schottky junction. This result reveals the possibility of employing surface treatments on electrodeposited Cu2O thin films in fabrication of high efficient Cu2O based junction devices.Item Thin film cuprous oxide homojunction photoelectrode for water splitting(Faculty of Science, University of Kelaniya, Sri Lanka., 2021) Kafi, F. S. B.; Thejasiri, S. A. A. B.; Wijesundera, R. P.; Siripala, W.Employing cuprous oxide (Cu2O) photoelectrodes in photoelectrochemical cells to generate hydrogen by water splitting is beneficial. Conventionally, it is limited in practice because of the well-known reasons of its inherent corrosiveness and poor conversion efficiencies. In this study, we have investigated the possibility of improving the efficiency of Cu2O photoelectrode in the form of p-n homojunction together with sulphidation. Initially, the optimum pH values for the n- and p-Cu2O thin film deposition baths are determined as 6.1 and 13 for Ti/n-Cu2O/p-Cu2O in photoelectrochemical cell configuration. Then, at these pH values the duration of n- and p-Cu2O thin film deposition is optimized by forming Ti/n-Cu2O/p-Cu2O photoelectrode. In this study, we found that at 45 minutes of n-Cu2O and 50 minutes of p-Cu2O thin film deposition together with sulphidation forms relatively high efficient Ti/n-Cu2O/p-Cu2O photoelectrode resulting Solar-To- Hydrogen (STH) conversion efficiency of 0.9%. In addition, current-voltage characteristic of the best Cu2O homojunction photoelectrode exhibits more negative shift in onset of photocurrent which indicates that photocurrent generation and transportation have improved by the formation of homojunction and further been enhanced by sulphidation.Item Effects of ZnO on inverted P3HT:PCBM bulk heterojunction solar cells(Faculty of Science, University of Kelaniya, Sri Lanka, 2020) Wanigasekara, G.; Namawardana, D.G.K.K.; Wanninayake, W.T.M.A.P.K.,; Jayathilaka, K.M.D.C.,; Wijesundera, R.P.; Siripala, W.Low cost, low environmental impact, ease of mass production and many more promising attributes of Organic Solar Cells (OSCs) have inspired researchers to investigate OCSs for increasing their performance and stability in a constant phase. Moreover, in the recent years, OSCs with inverted structures have gained more attention compared to the conventional configuration of the device. In this study, Indium Tin Oxide (ITO) -free inverted OSC devices were fabricated on polished Stainless Steel (SS) substrates with top illumination in order to have the device structure of SS/ZnO/P3HT:PCBM/PEDOT:PSS/Au. A thin film of Zinc Oxide (ZnO) layer was deposited on SS substrates from a solution of Zinc Acetate Dihydrate (ZnC₄H₆O₄·2H2O) using spin coating technique. The active layer was spin-coated from a bulk heterojunction polymer blend of regioregular Poly(3-hexylthiophene) (P3HT) and Phenyl-C61-butyric acid methyl ester (PCBM) on the prepared ZnO layer. On the top of the active layer, Ethylene glycol doped poly(3,4- ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) was blade coated as the hole transport layer. Then the stack was annealed before Gold (Au) was sputter coated to make the top contact. The device performance was optimized by varying a number of parameters including the concentration of ZnC₄H₆O₄·2H2O solution, thickness of the ZnO layer, annealing temperature, annealing time, composition of the polymer blend and dopant material of PEDOT:PSS dispersion. Open circuit voltage (Voc) and short circuit current (Jsc) of the devices increased after applying ZnO layer. The thermal annealing improved the fill factor (FF) of the devices. Spectral response measurements reveal that photon energies higher than 1.77 eV are absorbed by the device and photogenerated electron-hole pairs are produced. The best OSC device exhibited Voc of 440 mV with the Jsc of 6.2 mA/cm2 , fill factor (FF) of 30% and maximum power conversion efficiency of 0.05%.Item Fabrication of inverted polymer based organic solar cells on stainless steel substrate(Faculty of Science, University of Kelaniya, Sri Lanka, 2020) Namawardana, D.G.K.K.; Wanigasekara, G.; Wanninayake, W.T.M.A.P.K.; Jayathilaka, K.M.D.C.; Wijesundera, R.P.; Siripala, W.In the past years, polymer based organic solar cells (OSCs) have become a widely researched topic as a potential candidate for producing clean and renewable energy due to their lightweight, high mechanical flexibility, and large-area processability. As an alternative for the conventional device structure, in this study, OSC devices with an inverted structure were fabricated and characterized under the top illumination. Regioregular poly (3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) were used as the electron donor and electron acceptor material respectively for the device fabrication with structure of SS/P3HT:PCBM/PEDOT:PSS/Au. On pre-cleaned stainless steel (SS) substrates, bulk heterojunction polymer blend was spin coated from chlorobenzene solution (20 mg/mL) with a 1:1 weight ratio of P3HT: PCBM and then it was thermally annealed. As a hole-transport-layer (HTL), a thin film of poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) doped with ethylene glycol (10 wt.%) was blade coated on the active layer and the stack was annealed at 120ºC for 10 minutes. As the top contact of the device, gold (Au) was sputter coated. Performances of the fabricated OSC devices were optimized by varying several discrete parameters including the spin rate of the active layer formation, annealing temperature and the annealing time of the active layer. The optimum conditions for the device fabrication with the best performance were at the spin rate of 3000 rev./min for the active layer formation whereas optimum annealing temperature and annealing time were 160ºC and 60 minutes, respectively. The best device produced had an open-circuit voltage (Voc) of 238 mV and a short-circuit current density (Jsc) of 4.36 mAcm-2 . A maximum power conversion efficiency (PCE) of 0.02% with a fill factor (FF) of 23.16% was obtained under 1 sun illumination (AM 1.5G, 1000 Wm-2 ). The spectral response measurements of the fabricated cell indicate that it absorbs photons with energy higher than 1.77 eV to generate electron-hole pairs. It is planned to fabricate a thin film of Zinc Oxide (ZnO) as a potential electron transport layer (ETL) on SS substrate to improve the FF and PCE of the device.Item Comparison of the properties of CZTS semiconductor films grown by sequential and single step electrodeposition techniques(Faculty of Science, University of Kelaniya, Sri Lanka, 2020) Fernando, W.T.R.S.; Jayathilaka, K.M.D.C.; Wijesundera, R.P.; Siripala, W.Cu2ZnSnS4 (CZTS) is a promising semiconductor material suitable for application in low-cost and environmentally friendly thin film solar cells due to its superior optoelectronics properties. It is a perfect absorber material due to its high absorption coefficient (>10-4 cm-1 ) and direct optical bandgap (1.4-1.5 eV). Among the CZTS preparation techniques, electrodeposition is an attractive technique because of its simplicity, low cost and easy process controlling capability. In this investigation, a comparative study on CZTS films grown by two different techniques, namely, sequential electrodeposition and single step electrodeposition, has been carried out. Electrodeposition of Cu, Sn and Zn stack layers followed by sulphurisation with H2S is one of CZTS growth techniques. In this study, growth parameters of sequentially electrodeposited CZTS were optimized to obtain best photoactive CZTS thin films. Electrodeposition parameters of Cu, Sn and Zn have been obtained using voltammograms. Cu thin film was electrodeposited on Mo substrate at –0.89 V vs Ag/AgCl in an electrochemical cell containing 0.4 M CuSO4, 3 M lactic acid and NaOH at pH 11. Deposition of Sn thin film on Mo/Cu electrodes was carried out at -1.2 V vs Ag/AgCl in an electrochemical cell containing 0.055 M, 2.25 M NaOH and 8 ml of sorbitol. Zn thin film was electrodeposited on Mo/Cu/Sn at -1.2 V vs Ag/AgCl in an electrochemical cell containing 0.2 M ZnSO4. In order to grow CZTS, Mo/Cu/Sn/Zn thin films were annealed at 550 oC for 60 min in H2S. In the single step electrodeposition, CZTS thin films on Mo substrate were potentiostatically electrodeposited at -1.05 V vs Ag/AgCl for 40 min in a three electrode electrochemical cell containing 0.02 M copper (II) sulfate pentahydrate (CuSO4·5H2O), 0.01 M zinc sulfate heptahydrate (ZnSO4·7H2O), 0.02 M tin sulfate (SnSO4) and 0.02 M sodium thiosulfate (Na2S2O3) at room temperature. 0.2 M tri-sodium citrate (C6H5Na3O7) was used as the complexing agent and tartaric acid (C4H6O6) was used as the pH control solution. The pH of the bath was maintained at 5. The Ag/AgCl and platinum electrodes were used as the reference and the counter electrodes respectively. Then samples prepared were annealed at 550 oC for 30 min in H2S. CZTS films grown by two techniques were characterized using X-ray diffraction, reflectance, dark and light I-V, spectral response and C-V measurements in a PEC containing 0.1 M sodium acetate. Reflectance measurements reveal that the band gap energy of the films is 1.45 eV and I-V and spectral response measurements reveal that CZTS thin films were photoactive and p-type. The results obtained revealed that high quality photoactive CZTS can be prepared using both techniques. However, I-V and spectral response characteristics revealed that photoactive properties of CZTS thin films prepared by single step electrodeposition technique are superior in comparison to sequentially electrodeposited thin films.