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Item Cu2O Homojunction Solar Cells: Efficiency Enhancement with a High Short Circuit Current(2024) Thejasiri, S. A. A. B.; Jayathilaka, K. M. D. C.; Kafi, F. S. B.; Kumara, L. S. R.; Seo, O.; Yasuno, S.; Sakata, O.; Siripala, W.; Wijesundera, R. P.Cu2O homojunction solar cells were fabricated using potentiostatic electrodeposition technique. n-Cu2O thin films were grown in an acetate bath while p-Cu2O thin films were grown in a lactate bath. In the growth of n-Cu2O films, cupric acetate concentration, pH and temperature of the bath, deposition potential and duration (film thickness) and annealing temperature were investigated. In the growth of p-Cu2O on n-Cu2O, concentration of copper sulphate and lactic acid solutions, pH and temperature of the bath, deposition potential and duration were investigated. In addition, the procedure of sulfidation of p-Cu2O film surface using (NH4)2S vapor, before depositing Au front contact, was also optimized to enhance the photoactive performance. The structural, morphological and optoelectronic properties of the Cu2O films were investigated using scanning electron microscopy (SEMs), high energy X-ray diffraction (HEXRD), hard X-ray photoelectron spectroscopy (HAXPES), spectral response and current–voltage (J-V) measurements. The best Cu2O homojunction solar cell exhibited Voc = 460 mV, Jsc = 12.99 mA·cm−2, FF = 42% and η = 2.51%, under AM 1.5 illumination. Efficiency enhancement with the record high Jsc value for the Cu2O homojunction solar cell has mainly been due to the optimization of pH of the n-Cu2O deposition bath and lactic acid concentration of the p-Cu2O deposition bath.Item Fabrication of inverted organic solar cells on stainless steel substrate with electrodeposited and spin coated ZnO buffer layers(Journal of Polymer Engineering, 2022) Namawardana, D. G. K. K.; Wanigasekara, R. M. G.; Wanninayake, W. T. M. A. P. K.; Jayathilaka, K. M. D. C.; Wijesundera, R. P.; Siripala, W.; Malik, M. I.Polymer based organic solar cells (OSCs) are of tremendous interest as suitable candidates for producing clean and renewable energy in recent years. In this study, inverted OSCs on stainless steel (SS) substrate with zinc oxide (ZnO) as the electron selective transport layer (ESTL), are investigated, occupying bulk heterojunction blend of regioregular poly(3-hexylthiophene) (P3HT) and phenyl- C61-butyric acid methyl ester (PCBM) as the active material and poly-(4,3-ethylene dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as the hole transport layer (HTL). The device structure is SS/ZnO/P3HT:PCBM/PEDOT:PSS/Au. ZnO films are prepared by spin coating and electrodeposition techniques, followed by annealing under ambient conditions. The insertion of ZnO layer between the SS substrate and active layer has improved short-circuit current ( Jsc), open-circuit voltage (Voc), fill factor (FF), and power conversion efficiency (PCE) compared to those of the reference cell without ZnO layer, achieving the highest efficiency of 0.66% for the device with spin coated ZnO from sol–gel technique. This enhancement can be attributed to the effective electron extraction and the increased crystallinity of ZnO after annealing treatments at higher temperatures as further confirmed by X-ray diffraction (XRD) and scanning electron microscope (SEM) analyses.Item A Comparative Study: Sequential and Single-Step-Electrodeposited CZTS Thin Films(Physica Status Solidi, 2022) Fernando, W. T. R. S.; Jayathilaka, K. M. D. C.; Wijesundera, R. P.; Siripala, W.CZTS (Cu2ZnSnS4) is a relatively new and promising semiconductor material suitable for photovoltaic applications due to its favorable optoelectronic properties. Of the many techniques available for growing these films, a comparative study on sequential and single-step electrodeposition methods to grow CZTS films is carried out in this investigation to explore the possibility of improving the quality of the films using the inexpensive electrodeposition technique. Mainly in both methods, potentiostatic electrodeposition technique is adopted for growing CZTS thin films. In both methods, growth conditions of the CZTS films are optimized after measuring the photoresponses in a photoelectrochemical (PEC) cell of the films that resulted at the end of each deposition step. The observed structural and optoelectronic properties of the films reveal that, in general, structurally good and photoactive CZTS films can be prepared using both methods. Moreover, photoresponse and Mott–Schottky measurements on CZTS films in a PEC reveal that CZTS films prepared using the single-step electrodeposition have better photoactive properties and improved doping densities. This important finding shows that when developing CZTS-based solar cells using the inexpensive electrodeposition technique, single-step electrodeposition is more advantageous.Item Electrodeposited homojunction Cu2O solar cell on FTO substrate(Research Symposium on Pure and Applied Sciences, 2018 Faculty of Science, University of Kelaniya, Sri Lanka, 2018) Kafi, F. S. B.; Jayathilaka, K. M. D. C.; Wijesundera, L. B. D. R. P.; Siripala, W.Cuprous oxide (Cu2O), an abundant photoactive semiconducting material has optimum optoelectronic properties to develop efficient, inexpensive and eco-friendly solar cells. Even though, it is possible to fabricate Cu2O based hetero or Schottky junction solar cells, it is believed that the reduction of interface strains via application of surface treatments can produce best efficient homojunction Cu2O solar cell. Apart from the homogeneity of a p-n junction, reduction of contact resistances of a solar cell also has a great impact on its overall performance. Previous studies have shown that, annealing and/or sulphidation of thin film Cu2O enhances the surface properties while sulphided p-Cu2O/Au junction exhibits ohmic behavior as well. Thus, in this study possibility of developing efficient thin film homojunction Cu2O solar cell on FTO substrate was tested by improving the surface properties of n- and p-Cu2O thin film layers. n-Cu2O thin film was potentiostatically electrodeposited in a three electrode photoelectrochemical cell, contained 0.1 M sodium acetate and 0.01 M cupric acetate, acetic acid at bath pH value of 6.1 and then, this thin film FTO/n-Cu2O photoelectrode was annealed at temperature of 4000C to form very thin p-Cu2O layer with lower surface defects. Subsequently, for a thicker absorber layer a thin film ptype Cu2O was electrodeposited on annealed FTO/n-Cu2O photoelectrode using a lactate bath, consisted 3 M lactic acid, 0.4 M copper(II) sulphate and 4 M sodium hydroxide at bath pH value of 13.0. Finally, to form ohmic back contact this bi-layer is directly exposed to ammonium sulphide vapor for 8s and sputtered thin film of Au on it. Photoresponses and modulated light induced current-voltage characterization of this final thin film Cu2O homojunction is given the highest VOC and JSC values of 154 mV and 3.905 mA/cm-2 respectively. This result revealed that application of surface treatments to the thin film n-Cu2O and the bi-layers ameliorates surface properties, thereby the optoelectronic properties. Parameterization of surface treatments and improvements in the front contact will further improve this homojunction solar cell.Item Optimization of growth parameters of photoactive Cu2ZnSnS4.(International Research Symposium on Pure and Applied Sciences, 2017 Faculty of Science, University of Kelaniya, Sri Lanka., 2017) Fernando, W. T. R. S.; Jayathilaka, K. M. D. C.; Wijesundera, R. P.; Siripala, W.Cu2ZnSnS4 (CZTS) is a promising candidate for application in low-cost and environmentally friendly thin film solar cells due to its optoelectronics properties. It is a perfect absorber material for photovoltaic applications due to its high absorption coefficient (>10-4 cm-1) and direct optical band gap (1.4 - 1.5 eV). Among the CZTS preparation techniques, electrodeposition of Cu, Sn and Zn stack layers followed by sulphurisation in H2S is an attractive technique because of its simplicity, low cost and easy to control stoichiometry. In this investigation, optimization of growth parameters in order to obtain photoactive CZTS thin films by sulphurisation of electrodeposited Cu, Sn and Zn stack layers has been investigated. Cu thin film was electrodeposited on Mo substrate at –0.89 V Vs Ag/AgCl electrode in an electrochemical cell containing 0.4 M CuSO4, 3 M lactic acid and NaOH at pH 11. Deposition of Sn thin film on Mo/Cu electrode was carried out at -1.2 V Vs Ag/AgCl in an electrochemical cell containing 0.055 M, 2.25 M NaOH and 8 ml of sorbitol. Zn thin film was electrodeposited on Mo/Cu/Sn at -1.2 V Vs Ag/AgCl in an electrochemical cell containing 0.2 M ZnSO4. Deposition parameters of Cu, Sn and Zn have been obtained by voltammograms. In order to grow CZTS, Mo/Cu/Sn/Zn thin film electrodes were annealed at 550 oC for 60 min in H2S. Sulphurisation process was carried out at different temperatures and durations using set of identical Mo/Cu/Sn/Zn thin film electrodes and thereby optimized temperature and duration of the sulpurisation. Atomic ratios of initial Cu, Sn and Zn layers could be crucial parameters in determining properties of CZTS thin films. Therefore, atomic ratios of Cu/Sn/Zn layers were optimized by changing Cu, Sn and Zn deposition duration. Various combinations of deposition durations were carried out and optimized by monitoring the dark and light I-V measurements in a PEC containing 0.1 M sodium acetate. Dark and light I-V characteristics revealed that the best photoactive CZTS films can be grown by depositing Cu for 20 min, Sn for 10 sec and Zn for 10 sec. Results further showed that photoconductivity of CZTS thin films is p-type. It is evident from reflectance measurements that the band gap of the CZTS films is 1.5 eV. In conclusion, it is found that the highest photoactive p-CZTS thin films can be grown by sulphurisation of electrodeposited Cu, Sn and Zn stack layers on Mo substrate using H2S at 550 oC for 60 min. Cu: Sn: Zn ratios of the stack layers are the crucial parameters in determining photoactive CZTS thin films. The methodology developed in this study will be further investigated in order to develop the materials for wider applications.Item Photoelectrolysis of water using electrodeposited Cu2O electrodes.(International Research Symposium on Pure and Applied Sciences, 2017 Faculty of Science, University of Kelaniya, Sri Lanka., 2017) Silva, A. G. T. D.; Jayathilaka, K. M. D. C.; Wijesundera, R. P.; Siripala, W.At present, fossil fuels are the main energy contributor of the world’s energy needs but gradually depletion of fossil fuels is heading towards an energy crisis. Therefore it is very important for us to find out a renewable clean energy source to minimize the use of fossil fuels and environmental problems created by the burning fossil fuels. Among the suggested alternative fuels, hydrogen is one of the best and it can be produced by photoelectrolysis of water. Finding correct semiconducting materials and techniques are the key areas of research in the development of an efficient photoelectrolysis device. Ultra low cost electrodeposited cuprous oxide (Cu2O) is a good candidate material because it has required semiconductor properties for the process. p-Cu2O electrode electrolyte system requires external bias to produce photocurrent and this can be overcome by using n-Cu2O. However, in our previous studies, we have observed the possibility of enhancement of photocurrent at zero bias using double electrode system (electrodeposted n-Cu2O, thermally grown p-Cu2O, electrolyte system). In this investigation it was studied the possibility of photoelectrolysis of water using electrodeposited n- and p-Cu2O thin film electrodes as a double photoelectrode system in a 0.1 M sodium acetate photoelectrochemcal cell. n-Cu2O thin films on Ti substrates were potentiostatically electrodeposited at −200 mV Vs Ag/AgCl for 60 minutes in an aqueous solution containing 0.1 M sodium acetate and 0.01 M cupric acetate. The initial pH of the deposition bath was adjusted to 6.1. The temperature of the electrolyte was maintained at 55 °C and counter and reference electrodes were a platinum plate and a Ag/AgCl electrode, respectively. p-Cu2O thin films were electrodeposited on Ti substrate at -400 mV Vs Ag/AgCl for 40 min in a three-electrode electrochemical cell containing a 3 M sodium lactate and 0.4 M CuSO4 solution at pH 11. During the electrodeposition, the baths were continuously stirred using a magnetic stirrer. Prior to the film deposition, substrates were cleaned with detergent, dilute HCl, distilled water, and finally ultrasonicated in distilled water. Electrolytic solutions were prepared with distilled water and reagent-grade chemicals. n-Cu2O thin films are annealed at 150 oC for 10 min in air. Possibility of photoelectolysis using electrodeposited Cu2O has been investigated using dark and light current–voltage measurements in a three-electrode electrochemical cell containing 0.1 M aqueous sodium acetate solution. Results reveal that photoelectrolysis process is enhanced by 380% when n- and p-Cu2O double electrode system was operated compared to the n-Cu2O single electrode system.