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Subject: search.filters.subject.ElectrodepositionAuthor: search.filters.author.Siripala, W.Author: search.filters.author.Jayathilaka, K. M. D. C.Has files: Yes

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    Electrodeposited homojunction Cu2O solar cell on FTO substrate
    (Research Symposium on Pure and Applied Sciences, 2018 Faculty of Science, University of Kelaniya, Sri Lanka, 2018) Kafi, F. S. B.; Jayathilaka, K. M. D. C.; Wijesundera, L. B. D. R. P.; Siripala, W.
    Cuprous oxide (Cu2O), an abundant photoactive semiconducting material has optimum optoelectronic properties to develop efficient, inexpensive and eco-friendly solar cells. Even though, it is possible to fabricate Cu2O based hetero or Schottky junction solar cells, it is believed that the reduction of interface strains via application of surface treatments can produce best efficient homojunction Cu2O solar cell. Apart from the homogeneity of a p-n junction, reduction of contact resistances of a solar cell also has a great impact on its overall performance. Previous studies have shown that, annealing and/or sulphidation of thin film Cu2O enhances the surface properties while sulphided p-Cu2O/Au junction exhibits ohmic behavior as well. Thus, in this study possibility of developing efficient thin film homojunction Cu2O solar cell on FTO substrate was tested by improving the surface properties of n- and p-Cu2O thin film layers. n-Cu2O thin film was potentiostatically electrodeposited in a three electrode photoelectrochemical cell, contained 0.1 M sodium acetate and 0.01 M cupric acetate, acetic acid at bath pH value of 6.1 and then, this thin film FTO/n-Cu2O photoelectrode was annealed at temperature of 4000C to form very thin p-Cu2O layer with lower surface defects. Subsequently, for a thicker absorber layer a thin film ptype Cu2O was electrodeposited on annealed FTO/n-Cu2O photoelectrode using a lactate bath, consisted 3 M lactic acid, 0.4 M copper(II) sulphate and 4 M sodium hydroxide at bath pH value of 13.0. Finally, to form ohmic back contact this bi-layer is directly exposed to ammonium sulphide vapor for 8s and sputtered thin film of Au on it. Photoresponses and modulated light induced current-voltage characterization of this final thin film Cu2O homojunction is given the highest VOC and JSC values of 154 mV and 3.905 mA/cm-2 respectively. This result revealed that application of surface treatments to the thin film n-Cu2O and the bi-layers ameliorates surface properties, thereby the optoelectronic properties. Parameterization of surface treatments and improvements in the front contact will further improve this homojunction solar cell.
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    Optimization of growth parameters of photoactive Cu2ZnSnS4.
    (International Research Symposium on Pure and Applied Sciences, 2017 Faculty of Science, University of Kelaniya, Sri Lanka., 2017) Fernando, W. T. R. S.; Jayathilaka, K. M. D. C.; Wijesundera, R. P.; Siripala, W.
    Cu2ZnSnS4 (CZTS) is a promising candidate for application in low-cost and environmentally friendly thin film solar cells due to its optoelectronics properties. It is a perfect absorber material for photovoltaic applications due to its high absorption coefficient (>10-4 cm-1) and direct optical band gap (1.4 - 1.5 eV). Among the CZTS preparation techniques, electrodeposition of Cu, Sn and Zn stack layers followed by sulphurisation in H2S is an attractive technique because of its simplicity, low cost and easy to control stoichiometry. In this investigation, optimization of growth parameters in order to obtain photoactive CZTS thin films by sulphurisation of electrodeposited Cu, Sn and Zn stack layers has been investigated. Cu thin film was electrodeposited on Mo substrate at –0.89 V Vs Ag/AgCl electrode in an electrochemical cell containing 0.4 M CuSO4, 3 M lactic acid and NaOH at pH 11. Deposition of Sn thin film on Mo/Cu electrode was carried out at -1.2 V Vs Ag/AgCl in an electrochemical cell containing 0.055 M, 2.25 M NaOH and 8 ml of sorbitol. Zn thin film was electrodeposited on Mo/Cu/Sn at -1.2 V Vs Ag/AgCl in an electrochemical cell containing 0.2 M ZnSO4. Deposition parameters of Cu, Sn and Zn have been obtained by voltammograms. In order to grow CZTS, Mo/Cu/Sn/Zn thin film electrodes were annealed at 550 oC for 60 min in H2S. Sulphurisation process was carried out at different temperatures and durations using set of identical Mo/Cu/Sn/Zn thin film electrodes and thereby optimized temperature and duration of the sulpurisation. Atomic ratios of initial Cu, Sn and Zn layers could be crucial parameters in determining properties of CZTS thin films. Therefore, atomic ratios of Cu/Sn/Zn layers were optimized by changing Cu, Sn and Zn deposition duration. Various combinations of deposition durations were carried out and optimized by monitoring the dark and light I-V measurements in a PEC containing 0.1 M sodium acetate. Dark and light I-V characteristics revealed that the best photoactive CZTS films can be grown by depositing Cu for 20 min, Sn for 10 sec and Zn for 10 sec. Results further showed that photoconductivity of CZTS thin films is p-type. It is evident from reflectance measurements that the band gap of the CZTS films is 1.5 eV. In conclusion, it is found that the highest photoactive p-CZTS thin films can be grown by sulphurisation of electrodeposited Cu, Sn and Zn stack layers on Mo substrate using H2S at 550 oC for 60 min. Cu: Sn: Zn ratios of the stack layers are the crucial parameters in determining photoactive CZTS thin films. The methodology developed in this study will be further investigated in order to develop the materials for wider applications.