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    Effects of Indium-Phosphide-Oxide on Photon Absorption of Multijunction Photovoltaic Cells
    (2011) Abdulla-Al-Galib, M.; Barua, S.; Salam, K.M.A.; Wijesundera, R.P.
    The objective of the anti-reflective coating on the solar cell has been to reduce the photon reflectance and increase the photon absorption. This increase in light trapping ability of the solar cell increases the maximum photocurrent of the incident solar spectrum. This increase of photon absorption of the cell increases the efficiency of the solar cell. In this paper we have worked on multi-junction solar cell and has shown how the photon absorption changes when we have an anti-reflective coating on top of the cell. The effect of using an anti-reflective coating on the photon absorption of multi-junction photovoltaic cell has been shown with simulation results. Our result shows that with the inclusion of an anti-reflective coating, Indium-Phosphide-Oxide, the photon absorption of the photovoltaic cell increases in the range of 528nm ? 710nm of solar spectrum over other current high efficient solar cell.
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    High efficient multi-junction photovoltaic cell based on indium-phosphide-Oxide, indium-gallium-arsenide and indium-gallium-antimony
    (International Conference on Advances in Electrical Engineering (ICAEE-2011, 2011) Abdulla-Al-Galib, M.; Barua, S.; Salam, K.M.A.; Awal, M.A.; Wijesundera, R.P.
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    Improved efficiency of photovoltaic cell based on indium-phosphide-oxide, indium-phosphide, indium-gallium arsenide and indium-gallium-antimonide
    (2012) Barua, S.; Abdulla-Al-Galib, M.; Salam, K.M.A.; Awal, M.A.; Wijesundera, R.P.
    Multi-junction photovoltaic cell of III-V alloyed semiconductor material with high optical sensitivity and ideal combination of band-gaps promotes high photon absorption. Using multiband-gap system and splitting the solar spectrum towards matched spectral sensitivity we can get higher efficiency of the solar cell. Also, higher photon absorption of the photovoltaic cell is achieved when anti-reflective coating (ARC) is applied. This ARC reduces the amount of photon reflection as well as transmission of the photon incident on the solar cell. In this paper, we have proposed a new multi-junction photovoltaic cell based on InPO/InP/InGaAs/InGaSb and has performed comparison of photon absorption, photon reflection and photon transmission with existing high efficient multi-junction solar cell. The result of our cell, InPO/InP/InGaAs/InGaSb shows much better photon absorption in the range of 400nm-774nm of the solar spectrum, with photon absorption of 64.4%, 95.4%, 95.1%, and 81.6% at 400nm, 500nm, 600nm, and 700 nm respectively.