Physics
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Item Electrodeposited thin film SnO2 photoelectrode for PEC applications(Institute of Physics, Sri Lanka, 2024) Kafi, F.S.B.; Gunaratna, B.H.; Jayathilaka, K.M.D.C.; Wijesundera, R.P.Tin oxide (SnO2) is a promising semiconductor material to develop photoelectrodes for photoelectrochemical (PEC) cells. Indeed, an effective PEC cell could be developed only if the photoelectrode is stable and free of corrosion in the selected electrolytic solution. In other words, the choice of an electrolyte for a PEC cell determines the stability of the photoelectrode in the PEC cell. In this study, we propose aqueous 0.1 M sodium nitrate (NaNO3) as an effective electrolyte for the PEC cell where thin film SnO2 is a photoelectrode. Current-voltage (I-V) measurements obtained by illuminated chopped ultra violate (UV) radiation established the electrodeposited thin films of SnO2 are stable and free of corrosion/photocorrosion in our PEC cell. In addition, we report the dependence of the photoresponses of electrodeposited thin film SnO2 in this PEC on the bath temperature and the deposition time.Item Effect of pre-surface treatments on p-Cu2O/Au Schottky junctions(Journal of the National Science Foundation of Sri Lanka,, 2021) Kafi, F.S.B.; Jayathilaka, K.M.D.C.; Wijesundera, R.P.; Siripala, W.Cuprous oxide (Cu2O) is a suitable semiconducting material in fabrication for low-cost, eco-friendly semiconductor junction devices. Besides the parameterization of the growth conditions of Cu2O, formation of metal contacts impact the overall performance of these type of devices. The existence of unavoidable dangling bonds and/or dislocated surface atoms could lead to form imperfect contacts with metals, for example in Cu2O/Au junction devices. Nevertheless, modification of the Cu2O thin film surfaces prior to make contacts with Au has shown the capability to alter the junction properties. Here we report that, the application of surface treatments; annealing and/or sulphidation on specifically the electrodeposited p-Cu2O thin film surfaces, where p-Cu2O thin films were grown in low cupric ion concentrated acetate bath, has influenced the interfacial properties of particular p-Cu2O/Au Schottky junctions compared to the untreated p-Cu2O/Au Schottky junction. This has been well-established by the results of SEM and C-V characterizations of p-Cu2O/Au Schottky junctions. The subsequent annealing and sulphidation of p-Cu2O thin film surfaces have lowered the built-in potential value by 121 mV compared to the untreated Schottky junction. This result reveals the possibility of employing surface treatments on electrodeposited Cu2O thin films in fabrication of high efficient Cu2O based junction devices.Item Effect of pre-surface treatments on p-Cu2O/Au Schottky junctions(Journal of the National Science Foundation of Sri Lanka, 2021) Kafi, F.S.B.; Jayathilaka, K.M.D.C.; Wijesundera, R.P.; Siripala, W.Cuprous oxide (Cu2O) is a suitable semiconducting material in fabrication for low-cost, eco-friendly semiconductor junction devices. Besides the parameterization of the growth conditions of Cu2O, formation of metal contacts impact the overall performance of these type of devices. The existence of unavoidable dangling bonds and/or dislocated surface atoms could lead to form imperfect contacts with metals, for example in Cu2O/Au junction devices. Nevertheless, modification of the Cu2O thin film surfaces prior to make contacts with Au has shown the capability to alter the junction properties. Here we report that, the application of surface treatments; annealing and/or sulphidation on specifically the electrodeposited p-Cu2O thin film surfaces, where p-Cu2O thin films were grown in low cupric ion concentrated acetate bath, has influenced the interfacial properties of particular p-Cu2O/Au Schottky junctions compared to the untreated p-Cu2O/Au Schottky junction. This has been well-established by the results of SEM and C-V characterizations of p-Cu2O/Au Schottky junctions. The subsequent annealing and sulphidation of p-Cu2O thin film surfaces have lowered the built-in potential value by 121 mV compared to the untreated Schottky junction. This result reveals the possibility of employing surface treatments on electrodeposited Cu2O thin films in fabrication of high efficient Cu2O based junction devices.Item Influence of Bath Temperature on CBD-CdS Thin Films(ScienceDirect, 2016) Kumarage, W.G.C.; Wijesundera, R.P.; Seneviratne, V.A.; Jayalath, C.P.; Dassanayake, B.S.CdS thin films were grown on conducting glass substrates at different bath temperatures in order to investigate their influence on opto-electrical properties of the chemical bath deposited (CBD) CdS thin films. The CBD-CdS process was carried out with 0.001 M CdSO4, 0.002 M CS(NH2)2 and NH3 solution at different bath temperatures from 40 to 80 0C for one hour. Fabricated films were characterized using UV-Vis spectrometry, SEM, PEC cell and Profilometer. The optical transmittances of the films decreased with increasing bath temperature due to the increase of the film thickness. CdS cluster size of the thin films grown in the bath at a temperature of 60 0C was considerably larger compared to the films fabricated at other bath temperatures. The variation of optical band gap (Eg) was found to be in good agreement with cluster size variation while electrical characterizations reveal considerably high Voc and Isc values for the films fabricated at a bath temperature of 80 0C.Item Tunable optoelectronic properties of CBD-CdS thin films via bath temperature alterations(2016) Kumarage, W.G.C.; Wijesundera, R.P.; Seneviratne, V.A.; Jayalath, C.P.; Dassanayake, B.S.The tunability of the band-gap value and electron affinity of the n-CdS by adjusting the growth parameters is very important as it paves the way to improve the efficiency of CdS-based solar cells by adjusting the band lineup with other p-type semiconductors. In this respect, polycrystalline n-CdS thin films were grown on FTO glass substrates at different bath temperatures (40–80 °C) by the chemical bath deposition technique. The structural, morphological and optoelectronic properties of CdS thin films were studied using x-ray diffraction, scanning electron microscopy, UV-Vis spectrometry, profilometry, atomic force microscopy, photoelectrochemical and Mott–Schottky measurements. Absorption measurements reveal that an energy-gap value of n-CdS can be adjusted from 2.27 to 2.57 eV and Mott–Schottky measurements indicate that the flat-band potential is increased from −699 to −835 V with respect to a Ag/AgCl electrode by decreasing the deposition bath temperature from 60 to 40 °C. This tunability of optoelectronic properties of n-CdS is very useful for applications in thin film solar cells and other devices.Item Fermi‐level pinning and effect of deposition bath pH on the flat‐band potential of electrodeposited n‐Cu2O in an aqueous electrolyte(Wiley Online Library, 2016) Kafi, F.S.B.; Jayathileka, K.M.D.C.; Wijesundera, R.P.; Siripala, W.Capacitance–voltage (C–V) and modulated light-induced current–voltage measurements were employed to investigate the Cu2O/electrolyte junction of electrodeposited n-Cu2O thin films. The Mott–Schottky plots resulting from the C–V measurements revealed that the extrapolated flat-band potential of n-Cu2O films was strongly influenced by the pH of the bath where the films were grown. The flat-band potential change was 300 mV for a pH difference of 0.8 and showed that the surface chemistry at an n-Cu2O/aqueous electrolyte interface was strongly affected by the pH of the film deposition bath. In addition, current–potential measurements revealed that at the measured flat-band potential the photocurrent did not vanish for n-Cu2O films and the Fermi level at the interface was pinned due to the presence of electrically active surface states. Information on the presence of electrically active surface states and the shift in flat-band potential will be very useful for applications of n-Cu2O films in various devices.Item Electrodeposited Cu2O homojunction solar cells: Fabrication of a cell of high short circuit photocurrent(Elsevier, 2016) Wijesundera, R.P.; Gunawardhana, L.K.A.D.D.S.; Siripala, W.A Cu2O homojunction solar cell was fabricated using a consecutive electrodeposition method of deposition of an n-Cu2O film followed by a p-Cu2O film, in two different acetate baths. Both n-type and p-type film growth conditions were optimized separately to yield high photocurrents in a photoelctrochemical (PEC) cell. Further, the resulted bi-layer films were investigated in the PEC for the verification of the formation of the p-n homojunction. In addition, p-Cu2O film surfaces of the bi-layers were sulphided using Na2S and (NH4)2S in order to improve the photoresponse of the homojunction before depositing a Au film for the solar cell device. The structural, morphological and optoelectronic properties of the Cu2O films were investigated using X-ray diffraction (XRD), scanning electron micrographs (SEMs), dark and light current–voltage (I-V) and spectral response measurements and observed that the films are of good quality. Incident photon to current efficiency (IPCE) and I-V characteristics of the solar cell device demonstrated that the Cu2O homojunction can produce a high short circuit current density Jsc. However, the overall conversion efficiency of the device is low due to poor fill factor and Voc. The solar cell characteristics of the structure Ti/n-Cu2O/p-Cu2O/Au were Voc=287.0±0.1 mV, Jsc=12.4±0. 1 mA/cm2, FF=25±2% and η=0.89±0.02%, under AM 1.5 illumination. The record high Jsc value of the device demonstrates the prospect being improved the efficiency of Cu2O homojunction solar cells by optimizing deposition, pretreatment and post treatment processes.Item Growth of (Cu2O)1-x (Cu2O)x thin films for PV applications(Sri Lanka Association for the Advancement of Science, 2013) Kalubowila, K.D.R.N.; Wijesundera, R.P.; Siripala, W.Item Improved n-type photoconductive Cu2O thin films(Sri Lanka Association for the Advancement of Science, 2013) Gunawardhana, L.K.A.D.D.S.; Wijesundera, R.P.; Siripala, W.Item Plantain Pith Battery Powered Lighting System(Institute of Physics, Sri Lanka, 2015) Kumara, K.S.J.; Wijesundera, R.P.; Jayasuriya, K.D.