Kalingamudali, S.R.D.; Wismayer, A.C.; Woods, R.C.; Wight, D.R.
(Solid State Electronics, 1997)
The emitter-mesa surface (perimeter) and emitter-base bulk recombination currents, in heterojunction bipolar transistors (HBTs), are known to degrade device performance at low applied voltages, where these currents dominate. ...